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IRF7307IRFN/a52avai20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7307TRIORFN/a16696avai20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package


IRF7307TR ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1242BIRF7307®HEXFET Power MOSFETl Generation V TechnologyN -C HAN NEL M O SF ET1 8l Ultra Lo ..
IRF7307TRPBF ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7309 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1243BIRF7309PRELIMINARY®HEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low ..
IRF7309PBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devices can be used in anSO-8application with dram ..
IRF7309QTRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package      Advanced Process Technology Ultra Low On-ResistanceN-CHAN ..
IRF7309TR ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devices can be used in anSO-8application with dram ..
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IRF7307-IRF7307TR
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
PD - 9.1242B
IRF7307
HEXFET© Power MOSFET
NCHANNEL MOSFET
$1l IliL 8 lll01
01D:2 l :EDD1
sal IP- 6 IIID2
GZEIIi-L- 531302
P-CHANNELMOSFET
Top View
N-Ch P-Ch
I/ross -20V
RDS(0n, 0.0500 0.0900
Max. .
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGs @ 4.5V 5.7 -4.7
ID @ TA = 25°C Continuous Drain Current, VGS © 4.5V 5.2 -4.3 A
ID @ TA = 70°C Continuous Drain Current, Ves @ 4.5V 4.1 -3.4
IDM Pulsed Drain Current C) 21 -17
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RGJA Maximum Junction-to-Ambient) - 62.5 "C/W
8/25/97
IRF7307
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. - - N-Ch 20 - - VGS = 0V, ID = 250pA
V(BR)DSS Drain to Source Breakdown Voltage P-Ch -20 - - V VGS = 0V, ID = -250pA
. N-Ch - 0.044 - 0 Reference to 25°C, ID = 1mA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient P-Ch - -0.012 - V/ C Reference to 25°C, ID = -1mA
N Ch - - 0.050 VGs = 4.5V, ID = 2.6A ©
. . - - - . - - - 0.070 VGS = 2.7V, ID = 2.2A ©
RDS(ON) Static Drain to Source On Resistance P-Ch - - 0.090 g VGS = -4.5V, ID = -2.2A ©
- - 0.140 VGs=-2.7V, ID=-1.8A©
N-Ch 0.70 - - VDS = VGs, ID = 250pA
V Th h I V I
GS(th) Gate res o d oltage P-Ch -0.7o - - V Vos = VGs, ID = -250pA
N-Ch 8.30 - - Ws = 15V, ID = 2.6A ©
ng Forward Transconductance P-Ch 4.00 - - s Vos = -15V, '0 = -2.2A ©
N-Ch - - 1.0 VDs = 16V, VGS = 0V
. - - P-Ch - - -1.0 VDS = -16V, VGS = 0V,
lass Drain to Source Leakage Current N-Ch - - 25 pA VDs = 16V, VGS = 0V, To = 125°C
P-Ch - - -25 Ws = -16V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage N-P - - i100 VGs = i 12V
Qg Total Gate Charge SE: I I 'iil N-Channel
N-Ch - - 2 2 ID = 2.6A, VDS = 16V, VGS = 4.5V
Qgs Gate-to-Source Charge P Ch 3'3 nC ©
N-Ch - - 8.0 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - - 9'0 b = -2.2A, Vos = -16V, VGs = -4.5V
. N- h - . -
tdwn) Turn-On Delay Time P-gh - :2 - N-Channel
. . N-Ch - 'iid - VDD = 10V, ID = 2.6A, Rs = 6.on,
tr Rise Time P-Ch - 26 - RD = 3.89
. N-Ch - 32 - ns ©
td(ott) Turn-Off Delay Time P-Ch - 51 - P-Channel
N-Ch - 51 - VDD = -10V, ID = -2.2A, RG = 6.09,
t, Fall Time P-Ch - 33 - RD = 4.59
Ln Internal Drain Inductace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
Ciss Input Capacitance 2‘8: - 2:53 - N-Channel
N-Ch - 280 - VGS = 0V, VDS =15V,f = 1.0MHz
COSS Output Capacitance P_Ch - 310 - pF ©
N-Ch - 140 - P-Channel
Crss Reverse Transfer Capacitance P-Ch - 170 - Ves = 0V, Vos = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
I . N-Ch - - 2.5
ls Continuous Source Current (Body Diode) P-Ch - - -2.5 A
. N-Ch - - 21
ISM Pulsed Source Current (Body Diode) (D P-Ch - - -17
. N-Ch - - 1.0 V To = 25°C, ls = 1.8A, VGs = 0V ©
Vso Diode Forward Voltage P-Ch - - -1.0 To = 25°C, ls = -1.8A, VGS = OV ©
t R R Ti N-Ch - 29 44 ns N-Channel
rr everse ecovery Ime P-Ch - 56 84 To = 25°C, IF = 2.6A, di/dt = 100A/ps
N-Ch - 22 33 nC P-Channel ©
A, Reverse Recovery Charge P-Ch - 71 110 To = 25°C, IF = -2.2A, di/dt = 100A/ps
ton Forward Turn-On Time N-P Intrinsic turn-on t me is neglegible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
© N-Channel ISD s 2.6A, di/dt s 100A/ps, vDD s V(BR)DSS, T J g 150°C
C3) Pulse width s: 300ps; duty cycle 3 2%.
P-Channel 13D 3 -2.2A, di/dt s 50A/ps, VDD s V(BR)DSS, T J 3 150°C
GD Surface mounted on FR-4 board, t s 10sec.
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