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IRF7306IRN/a31262avai-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7306TRIORN/a663avai-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package


IRF7306 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1241CIRF7306®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7306Q ,-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7306QTRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7306QTRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7306TR ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1241CIRF7306®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7306TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
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IRF7306-IRF7306TR
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
PD - 9.1241C
IRF7306
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
HEXFET© Power MOSFET
Top View
VDSS = -30V
RDS(on) = 0.109
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -10V -4.0
In @ TA = 25°C Continuous Drain Current, VGs @ -10V -3.6 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.9
IDM Pulsed Drain Current co -14
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGs Gate-to-Source Voltage :20 V
dv/dt Peak Diode Recovery dv/dt Q) -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient - 62.5 "C/W
8/25/97
IRF7306 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage -30 - - V I/ss = 0V, ID = -250uA
AvangSS/ATJ Breakdown Voltage Temp. Coefficient - -0.037 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.10 C2 VGS = -10V, b = -1 .8A ©
- - 0.16 I/ss = -4.5V, ID = -1.5A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
git Forward Transconductance 2.5 - - S l/os = -24V, ID = -1.8A
I Drain-to-Source Leaka e Current - - -l .0 pA VDS = -24V, VGS = 0V
DSS g - - -25 l/os = -24v, VGS = 0v, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 I/ss = 20V
Qg Total Gate Charge - - 25 ID = -1.8A
Qgs Gate-to-Source Charge - - 2.9 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - - 9.0 I/ss = -10V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 11 - VDD = -15V
tr Rise Time - 17 - ns ID = -1.8A
td(off) Turn-Off Delay Time - 25 - Rs = 6.09
t, Fall Time - 18 - RD = 8.29, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - . D
nH Between lead tip E )
and center of die contact G
LS Internal Source Inductance - 6.0 - S
Ciss Input Capacitance - 440 - I/ss = 0V
Coss Output Capacitance - 200 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 93 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -2 5 MOSFET symbol D
(Body Diode) . showing the _
A . ll
ISM Pulsed Source Current integral reverse G m
(Body Diode) OD - - -14 p-n junction diode. S
VSD Diode Forward Voltage - - -1.0 V To = 25°C, Is = -1.8A, I/ss = 0V ©
tn Reverse Recovery Time - 53 80 ns To = 25°C, IF = -1.8A
er Reverse RecoveryCharge - 66 99 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See hg. 11 )
© ISD g -1.8A, di/dt g 90A/ps, VDD g V(BR)ross, GD Surface mounted on FR-4 board, t s 10sec.
T J s150°C
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