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IRF7241TRPBF
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
Tait Rectifier
PD - 95294
IRF7241PbF
HEXFET© Power MOSFET
o Trench Technology Voss Rnsion) max (mf2) ID
. Ultra Low On-Resistance -4ov 41 @VGS = -1ov -6.2A
. P-C_hanne_l MOSFET 7O@VGS = -4.5V -5.0A
oAvailable In Tape & Reel
. Lead-Free
. . 1 8
Description s DE m: D
New trench HEXFET® Power MOSFETs from s D312 _ 7 D
International Rectifier utilize advanced processing 3 (ll DE
techniques to achieve extremely low on-resistance s CIE] lm, D
per silicon area. This benefit, combined with the 4 5
ruggedized device design that HEXFET power G DI] LIL] D
MOSFETs are well known for, provides the designer . SO 8
with an extremely efficient and reliable device for use Top View -
in battery and load management applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ -10V -6.2
ID @ TA-- 70°C Continuous Drain Current, Ves @ -10V -4.9 A
IDM Pulsed Drain Current (D -25
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
1
10/6/04
IRF7241 PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - 25 41 mg Vas = -10V, ID = -6.2A ©
- 45 70 VGS = -4.5V, ID = -5.0A ©
Vesah) Gate Threshold Voltage -1.0 - -3.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 8.9 - - S Vos = -10V, ID = -6.2A
loss Drain-to-Source Leakage Current - - -10 pA 1hos = -32V, VGS = 0V
- - -25 Ihos = -32V, l/ss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 20V
09 Total Gate Charge - 53 80 ID = -6.2A
Qgs Gate-to-Source Charge - 14 21 nC VDs = -32V
di Gate-to-Drain ("Miller") Charge - 3.9 5.9 Vas = -10V
tdmn) Turn-On Delay Time - 24 - VDD = -20V ©
tr Rise Time - 280 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 210 - Re = 6.09
if Fall Time - 100 - Vas = -10V
Ciss Input Capacitance - 3220 - Vas = 0V
COSS Output Capacitance - 160 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 190 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 25 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, VGS = 0V ©
tn Reverse Recovery Time - 32 48 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 45 68 nC di/dt = -100A/us ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
