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IRF7233TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRIectifier
PD - 95939
IRF7233PbF
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET s BI In, D
0 Surface Mount gm: H 7 D VDSS = -121/
0 Available in Tape & Reel tf SE
q Lead-Free S E 333 D
G BI 533: D RDs(on) = 0.0209
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V 19.5
ID @ TA-- 70°C Continuous Drain Current, Vas @ -4.5V 16.0 A
IDM Pulsed Drain Current (D t76
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 60 mJ
VGS Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 °C/W
1
1 1/9/04
IRF7233PbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 - - V Vas = 0V, lo = -5.0mA
V(Bmoss Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.001 - V/°C Reference to 25°C, ID = -1mA
Rrosom Static Drain-to-Source On-Resistance - 0.013 0.020 Q Vas = -4.5V, ID = -9.5A ©
- 0.023 0.033 Vss = -2.5V, ID = -6.0A ©
VGS(th) Gate Threshold Voltage -0.6 - - V VDs = Vss, ID = -250pA
gfs Forward Transconductance 3.3 - - S VDs = -10V, ID = -9.5A
- - -1O VDS = -12V, Vas = 0V
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -9.6V, Vas = 0V
- - -100 VDS = -12V, Vas = 0V, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 l/ss = 12V
09 Total Gate Charge - 49 74 ID = -9.5A
Qgs Gate-to-Source Charge - 9.3 14 no Ihos = -10V
di Gate-to-Drain ("Miller") Charge -- 22 32 Vss = -5.0V©
td(on) Turn-On Delay Time - 26 - VDD = -10V
tr Rise Time - 540 - ID = -9.5A
td(off) Turn-Off Delay Time - 77 - ns RD = 1.09
tt Fall Time - 370 - Rs = 6.29 (D
Ciss InputCapacitance - 4530 6000 Vas = 0V
Coss Output Capacitance - 2400 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 2220 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -76 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -2.5A, VGS = 0V ©
tn Reverse Recovery Time - 43 65 ns Tu = 25°C, IF = -2.5A
G, Reverse RecoveryCharge - 35 52 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
Ra = 259, IAS = 9.5A.
© When mounted on 1 inch square copper board, t<10 sec
© Starting To = 25°C, L = 1.3mH
