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IRF7205TRPBFINTERNATIONAN/a1800avai-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7205TRPBFIRN/a60000avai-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7205TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRRectifier
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
o Lead-Free
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
PD - 95021
IRF7205PbF
HEXFET® Power MOSFET
VDSS = -30V
D RDS(on) = 0.070Q
Top View
ID = -4.6A
Parameter
Max. Units
ID @ TA = 25''C
Continuous Drain Current, Vss @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-3.7 A
km, Pulsed Drain Current (D
PD @Tc = 25°C Power Dissipation
Linear Derating Factor
0.020 W/°C
Vss Gate-to-Source Voltage
dv/dt Peak Diode Recovery dv/dt ©
-3.0 V/nS
Tu, TSTG
Junction and Storage Temperature Range
-55 to + 150 "C
Thermal Resistance Ratings
Parameter
Max. Units
ROUA Maximum Junction-to-Ambient ©
50 "C/W

2/18/04
|RF7205PbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vcs = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.024 - V/°C Reference to 25''C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0070 Q l/cs = -10V, ID = -4.6A ©
- - 0.130 VGs = -4.5V, ID = -2.0A ©
Vesah) Gate Threshold Voltage -1.0 - -3.0 V Vros = VGs, ID = -250pA
git Forward Transconductance - 6.6 - S Vros = -15V, ID = -4.6A ©
. - - -1.0 VDS = -24V, N/cs = ov
I Drain-to-Source Leaka e Current A
ces g - - -5.0 p l/ns = -15V, l/ws = 0V, Tu = 70 'C
ds Gate-to-Source Forward Leakage - - -100 nA l/cs = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 27 40 ID = -4.6A
Qgs Gate-to-Source Charge - 5.2 - nC Vros = -15V
di Gate-to-Drain ("Miller") Charge - 7.5 - Vss = -10V ©
td(on) Turn-On Delay Time - 14 30 VDD = -15V
tr Rise Time - 21 60 ns ID = -1.0A
tam) Turn-Off Delay Time - 97 150 Re = 6.09
tf FaIITime - 71 100 RD = lon ©
LD Internal Drain Inductance - 2.5 - _
nH Between Iead,6mm(0.25in.)
f k d t
Ls Internal Source Inductance - 4.0 - mm. pac age an cen er
of die contact
Ciss Input Capacitance - 870 - Vcs = 0V
Cass Output Capacitance - 720 - pF I/os = -10V
Crss Reverse Transfer Capacitance - 220 - f =1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFETsymbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -15 p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V Tu = 25''C, Is = -1.25A, Ves = 0V ©
trr Reverse Recovery Time - 70 100 ns Tu = 25''C, IF = -4.6A
Qrr Reverse RecoveryCharge - 100 180 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
co Iso S -4.6A, di/dt S 90A/ps, VDD S V(BR)DSS’
Tu 3 150°C

© Pulse width S 300psi duty cycle S 2%.
© Surface mounted on FR-4 board, t S 10sec.
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