| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IRF712STR |
IR|International Rectifier |
N/a |
93 |
 |
|
IRF713 ,N-Channel Power MOSFETs/ 2.25A/ 350-400VElectrical Characteristics (TC= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit ..
IRF720 ,3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 3.3A, 400VThis N-Channel enhancement mode silicon gate power field = 1.800Ω•rDS(ON) ..
IRF7201 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7201PBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package®HEXFET Power MOSFET Generation V TechnologyAA1 8S D Ultra Low On-ResistanceV = ..
IRF7201TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IS93C86A-3GRI , 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
