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IRF7106-IRF7106TR
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
IOR Rectifier PRELIMINARY
PD - 9.1098B
|RF7106
N-Ch P-Ch
VDss 20V -20V
RDs(on) 0.1259 0.20n
ID 3.0A -2.5A
HEXFET© Power MOSFET
o Advanced Process Technology
a Ultra Low On-Resistance S1 UTEHANNELMOSFEJEJ D1
o Dual N and P Channel Mosfet ' T i“
. Surface Mount 6112 75m DI
. Available in Tape & Reel 521T; Inr, D2
. Dynamic dv/dt Rating 4 (t 5
q Fast Switching G2 ClIP-CHANNELMOSFETEED D2
Top View
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. VMth these improvements, multiple devices can be used in an SO-8
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
ID @ Tc = 25°C Continuous Drain Current, V GS @ 10V 3.0 -2.5
lo @ Tc = 70°C Continuous Drain Current, V GS @ 10V 2.5 -2.0 A
IDM Pulsed Drain Current OD 10 -10
Pro @Tc = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 Wl°C
l/ss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 3.0 -3.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJA Junction-to-Ambient (PCB Mount)" - - 62.5 °CNV
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. Revision 3
IRF7106 TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 20 - - V55 = 0V, lo = 250pA
V D " -S B kd V It
(BR)DSS ram 0 ource rea own o age P-Ch -20 - - v VGS = 0V, ID = -250PA
. N-Ch - 0.037 - Reference to 25°C, ID = 1mA
AV IAT B kd V I T . m ty
(BR)DSS J rea own o tage emp Coe icient P-Ch - -o.022 - V/ C Reference to 25'C, ID = -1mA
N-Ch - - 0.125 VGS =10V,ID =1.0A ®
RDSmN) Static Drain-to-Source On-Resistance - - 0.25 Q VGS = 4.5V, ID = 0.50A (3
P-Ch - - 0.20 VGs = -1OV, ID = -1.0A (3)
- - 0.35 VGs = -4.5V, ID = -0.50A G)
N-Ch 1.0 - - VDS = VGS, ID = 250pA
V Gate Threshold Volta e
GS(th) g P-Ch -1.o - - V Ws = VGS, ID = -250pA
gfs Forward Transconductance N-Ch - 4.4 - s Ws = 15V, ID = 3.0A G)
P-Ch - 3.0 - Ws = -15V, ID = -3.0AG>
N-Ch - - 2.0 Vros = 16V, VGs = 0V
Iross Drain-to-Source Leakage Current P-Ch - - -2.O pA VDS = -16V, I/cs = 0V
N-Ch - - 25 Vros = 16V, VGS = 0V, TJ = 125°C
P-Ch - - -25 VDS = -16V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage N-P - - 1100 nA VGs = 1 20V
09 Total Gate Charge E8: - 9111 li N-Channel
'Cd/ I 1 2 - b = 2.3A, Vos =10V,Vcs = 10V
Qgs Gate-to-Source Charge P-Ch - 1‘6 - nC (D
. . N-Ch - di, - P-Channel
di Gate-to-Drain ( Miller ) Charge P-Ch - 3:5 - k, = -2.3A, Ihos = -10V, Ves = -10V
tum) Turn-On Delay Time 2%: - 518 lg N-Channel
N-Ch - 10 20 VDD = 20V, ID = 1.0A, Rs = 6.09,
t Rise Time =
r P-Ch - 15 40 ns RD 20n (3)
tam) Turn-Off Delay Time le," - i 33 P-Channel
Lic/ I 22 50 VDD = -20V, '0 = -1.0A, Rs = 6.on,
tr Fall Time RD = 20n
P-Ch - 39 60
u, Internal Drain Inductace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
Ciss Imput Capacitance 2'8: - 333 - N-Channel
N_Ch - 260 - VGS = 0V, Vros = 15V, f =1.0MHZ
Cass Output Capacitance P_Ch - 250 - pF (3)
N_Ch - 62 - P-Channel
Crss Reverse Transfer Capacitance P‘Ch - 86 - VGS = 0V, Vos = -15V, f = 1.0MH2
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. V N-Ch - - 1.7
Is Continuous Source Current (Body Diode) P-Ch - - -1.6 A
. N-Ch - - IO
ISM Pulsed Source Current (Body Diode) (D P-Ch - - -10
. N-Ch - 0.90 1.2 V To = 25°C, ls = 1.6A, I/ss = 0V 3)
VSD Diode Forward Voltage P-Ch - -0.90 -1.6 To = 25°C, ls = -1.3A, Vss = OV (3
t R v r R v Tim N-Ch - 69 100 ns N-Channel
rr e e se eco ery e P-Ch - 69 100 T J = 25''C,IF=1.25A, dildt=100Alps
N-Ch - 58 120 P-Channel G)
a,, Reverse Recovery Charge P-Ch - 91 180 nC To = 25°c_ IF = -1.25A, di/dt = 100/Ups
ts, Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by L s+Lo)
Notes: © N-Channel Iso f 2.3A, di/dt S 100Alps, VDD S V(BR)DSS! TJ f 150°C
C) Repetitive rating; pulse width limited by P-Channel ISD S -2.3A, di/dt S 50A/ps, VDD S V(BR)ross, To S 150°C
max. junction temperature. ( See fig. 23) © Pulse width 3 soaps; duty cycle f 2%.
