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IRF7104-IRF7104TR
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
Adavanced Process Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
PD - 9.1096B
IRF7104
HEXFET© Power MOSFET
Sl Ere- 31:01
VDSS = -20V
S2 m-'- L-n- D2 RDS(on) = 0.2509
5_Li_D2
Top View
ID =-2.3A
Parameter
Max. Units
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V
lo @ TA = 70°C Continuous Drain Current, Veg @ 10V
-1.8 A
IDM Pulsed Drain Current C)
PD @Tc = 25°C Power Dissipation
Linear Derating Factor
0.016 W/°C
Ves Gate-to-Source Voltage
dv/dt Peak Diode Recovery dv/dt ©
-3.0 V/nS
TU,TSTG Junction and Storage Temperature Range
-55 to +150 00
Thermal Resistance Ratings
Parameter
Min. Typ. Max. Units
Ram Maximum Junction-to-Ambient co
- - 62.5 °CNV
8/25/97
IRF7104 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V N/ss = 0V, ID = -250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - -0.015 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - 0.19 0.25 Q VGS = -10V, ID = -1.0A ©
- 0.30 0.40 VGs = -4.5V, ID = -0.50A ©
VGS(th) Gate Threshold Voltage -1.0 - -3.0 V VDs = VGs, ID = -250pA
gfs Forward Transconductance - 2.5 - S VDs = -15V, ID = -2.3A ©
I Drain-to-Source Leaka e Current - - -2.0 PA I/ras = -16V, VGS = 0V
DSS g - - -25 v03 = -16V, VGS = 0v, TJ = 55 °c
less Gate-to-Source Forward Leakage - - -100 nA l/cs = -12V
Gate-to-Source Reverse Leakage - - 100 I/ss = 12V
% Total Gate Charge - 9.3 25 ID = -2.3A
Qgs Gate-to-Source Charge - 1.6 - nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 3.0 - I/ss = -10V ©
td(on) Turn-On Delay Time - 12 40 VDD = -10V
tr RiseTime - 16 40 ns ID = -1.0A
td(off) Turn-Off Delay Time - 42 90 Rs = 6.09
tf FallTime - 30 50 RD = lon ©
LD Internal Drain Inductance - 4.0 - Between lea d, 6mm (0. 25in.) ED
nH from package and center G )
LS Internal Source Inductance - 6.0 - .
of die contact s
Ciss Input Capacitance - 290 - I/ss = 0V
Coss Output Capacitance - 210 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 67 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -2 O MOSFET symbol D
(Body Diode) . A showing the H3
ISM Pulsed Source Current integral reverse G l
(Body Diode) co - - -9.2 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -1.25A, I/ss = 0V ©
trr Reverse Recovery Time - 69 100 ns Tu = 25°C, IF = -1.25A
er Reverse RecoveryCharge - 90 140 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle 3 2%.
max. junction temperature.
© la, s -2.3A, di/dt s 100A/ps, VDD f V(BR)DSS’ 60 Surface mounted on FR-4 board, ts: 10sec.
T " 150°C
