IC Phoenix
 
Home ›  II26 > IRF7103-IRF7103TR,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7103-IRF7103TR Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7103IORN/a593avai50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7103TRIORN/a3179avai50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7103TR ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedSO-8leadframe for enhanced thermal char ..
IRF7104 ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1096BIRF7104®HEXFET Power MOSFETl Adavanced Process Technology18S1 D1l Ultra Low On-Resistan ..
IRF7104PBF , HEXFET Power MOSFET
IRF7104TR ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1096BIRF7104®HEXFET Power MOSFETl Adavanced Process Technology18S1 D1l Ultra Low On-Resistan ..
IRF7106 ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1098BIRF7106PRELIMINARY®HEXFET Power MOSFETAdvanced Process TechnologyN-CHANNEL MOSFETUltra ..
IRF7106TR ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customized leadframe for enhancedthermal characte ..
IS93C46-3GR , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3GRL , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3GRLI , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3P , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3PI , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46D , 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM


IRF7103-IRF7103TR
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
PD - 9.1095B
IRFr103
HEXFET© Power MOSFET
o Adavanced Process Technology
o Ultra Low On-Resistance Sl use l a_LLD1 V - 50V
o Dual N-Channel MOSFET 61W l L-n-ol DSS -
o Surface Mount ILL UL
o Available in Tape & Reel S2 D2 RDS(on) = 0.1309
o Dynamic dv/dt Rating G2 I ll 5 ll D2
o Fast Switching Top View ID - 3.0A
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA-- 25°C Continuous Drain Current, VGS @ 10V 3.0
ID @ TA-- 70°C Continuous Drain Current, Ves @ 10V 2.3 A
IDM Pulsed Drain Current C) 10
PD @Tc = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Ves Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 4.5 V/nS
TU,TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Min. Typ. Max. Units
Ram Maximum Junction-to-Ambient G) - - 62.5 °CNV
8/25/97
|RF7103
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 - - V N/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.049 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - 0.11 0.13 Q VGS = 10V, ID = 3.0A ©
0.16 0.20 VGs = 4.5V, ID =1.5A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = VGs, ID = 250pA
gfs Forward Transconductance - 3.8 - S VDs = 15V, ID = 3.0A ©
I Drain-to-Source Leaka e Current - - 2.0 PA I/ras = 40V, I/ss = 0V
DSS g - - 25 v03 = 40V, VGS = 0v, Tu = 55 ''C
less Gate-to-Source Forward Leakage - - 100 nA l/cs = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = - 20V
% Total Gate Charge - 12 30 ID = 2.0A
Qgs Gate-to-Source Charge - 1.2 - nC VDS = 25V
di Gate-to-Drain ("Miller") Charge - 3.5 - I/ss = 10V ©
td(on) Turn-On Delay Time - 9.0 20 VDD = 25V
tr RiseTime - 8.0 20 ns ID = 1.0A
td(off) Turn-Off Delay Time - 45 70 Rs = 6.09
tf FallTime - 25 50 RD = 259 ©
LD IntemaIDrainInductance - 4.0 - Between lead,6mm(0.25in.) _,i_i_ij,
nH from package and center G )
LS Internal Source Inductance - 6.0 - .
of die contact s
Ciss Input Capacitance - 290 - I/ss = 0V
Coss Output Capacitance - 140 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 37 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 0 MOSFET symbol D
(Body Diode) . A showing the Hi:
ISM Pulsed Source Current integral reverse G E
(Body Diode) co - - 12 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, Is = 1.5A, VGS = 0V ©
trr Reverse Recovery Time - 70 100 ns Tu = 25°C, IF = 1.5A
er Reverse RecoveryCharge - 110 170 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© ISD S 1.8A, di/dt S 90A/ps, VDD S V(BR)DSS:
TJs150°C
© Pulse width f 300ps; duty cycle f 2%.
© Surface mounted on FR-4 board, t s 10sec.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED