IRF7103QTR ,N-channel power MOSFET for anti-lock braking systems applications, 50V, 3Aapplications. This dual, surface mountSO-8 can dramatically reduce board space and is also availab ..
IRF7103QTRPBF ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package IRF7103QPbF®HEXFET Power MOSFETBenefitsV R max (m I
IRF7103QTR
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
International
Tart Rectifier
Typical Applications
o Anti-Iock Braking Systems (ABS)
o Electronic Fuel Injection
o Power Doors, Windows & Seats
Benefits
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to TImax
Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, these
HEXFETO Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualired HEXFET Power MOSFET's are a 175°C
AUTOMOTIVE MOSFET
PD - 93944C
IRF7103Q
HEXFET© Power MOSFET
Voss RDS(on) max (mn) ID
50V 130@sz = ION/ 3.0A
200@VGS = 4.5V 1.5A
junction operating temperature, fast switching speed and Top View SO-8
improved repetitive avalanche rating. These benehts combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The emcient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 4.5V 3.0
ID @ To = 70°C Continuous Drain Current, VGS @ 4.5V 2.5 A
IDM Pulsed Drain Current OD 25
Po @Tc = 25°C Power Dissipation© 2.4 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage , 20 V
EAs Single Pulse Avalanche Energy) 22 mJ
IAR Avalanche Current0) See Fig.160, 16d, 19, 20 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt s 12 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
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03/14/02
IRF7103Q International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA
RDSm Static Drain-to-Source On-Resistance - - 130 mn VGS = 10V, ID = 3.OA ©
- - 200 VGs = 4.5V, ID = 1.5A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 3.4 - - S Vos = 15V, lo = 3.0A
loss Drain-to-Source Leakage Current - - 2.0 pA VDS = 40V, VGS = 0V 0
- - 25 Vos = 40V, VGS = 0V, To = 55 C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - 10 15 ID = 2.0A
Qgs Gate-to-Source Charge - 1.2 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 2.8 - VGS = 10V
tum) Turn-On Delay Time - 5.1 - VDD = 25V ©
tr Rise Time - 1.7 - ns ID = 1.0A
tum) Turn-Off Delay Time - 15 - Rs = 6.on
tr Fall Time - 2.3 - RD = 25n
Ciss Input Capacitance - 255 - I/ss = 0V
Coss Output Capacitance - 69 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 29 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 3.0 showing the
ISM Pulsed Source Current - - 12 integral reverse G
(Body Diode) (D p-n junction diode. s
I/so Diode Forward Voltage - - 1.2 V Tu = 25°C, ls = 1.5A, VGS = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25''C, IF = 1.5A
Gr Reverse Recovery Charge - 45 67 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Starting To = 2YC, L = 4.9mH
max. junction temperature. Rs = 259, IAS = 3.0A. (See Figure 12).
© Pulse width 5 400ps; duty cycle S 2%. © ISD s: 2.0A, di/dt f 155/Ups, V00 3 V(BR)Dss-
© Surface mounted on 1 in square Cu board T: S 175°C
© Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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