IRF6725MTRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6729MTRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance.
IRF6797MTRPBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance.
IRF6798MTRPBF , HEXFET Power MOSFET plus Schottky Diode
IRF710 ,2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFETInternational
19R
Rectifier
PD-9.327J
|RF710
HEXFETO Power MOSFET
. Dynamic dv/dt ..
IRF7101 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.871BIRF7101®HEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-ResistanceS1 ..
IS82C84A ,CMOS Clock Generator Driver
IS82C85 ,CMOS Static Clock Controller/GeneratorFeatures Description• Generates the System Clock For CMOS or NMOS The Intersil 82C85 Static CMOS Cl ..
IS82C86H-5 ,CMOS Octal Bus Transceiver82C86HMarch 1997 CMOS Octal Bus Transceiver
IS82C88 ,CMOS Bus Controller82C88March 1997 CMOS Bus Controller
IS82C89 ,CMOS Bus Arbiter82C89March 1997 CMOS Bus Arbiter
IS82C89 ,CMOS Bus Arbiter82C89March 1997 CMOS Bus Arbiter
IRF6725MTRPBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.
International
TOR Rectifier
PD - 96120A
IRF6725MPbF
lRF6725WT1PbF
DirectFETTM Power MOSFET Q)
Typical values (unless otherwise specified)
o RoHS Compliant and Halogen Free co
. Low Profile (
q Dual Sided Cooling Compatible OD 30V max t201/ max 1.7mQ© 10V 2.4mQ@ 4.5V
q Ultra Low Package Inductance A tot di Ass On Qoss Vgs(th)
q Optimized for High Frequency Switching co 36nC 11nC 3.9nC 39nC 21nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for both Sync.FET and some Control FET "s.
application(0 ds
0 Low Conduction and Switching Losses (t Ew-“ry‘ _
q Compatible with existing Surface MountTechniques (D k
q 100% Rg tested W DirectFETw ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMala3lMTlMPl I
Description
The IRF6725MPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
vss Gate-to-Source Voltage t20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V © 28
ID © T, = 70°C Continuous Drain Current, Vss @ 10V © 22 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 170
IDM Pulsed Drain Current Cs) 220
EAS Single Pulse Avalanche Energy © 190 mJ
IAR Avalanche Current © 22 A
6 ":jiS" 5.0 I l
I = 28A tD I = 22A - .
A 5 D g D VDS_I24V\ / /
% "g 4.0 vrs-- 15)/s, ef, "
1 4 > \ f,,,:,,'''''''''
g 8 3 0 r "
V s. . / /
g 3 g "
tr T J = 125°C o 2 o I
g 2 ‘r /
= - til 1.0 d
'- 1 T J = 25°C to.,
0 J 0.0
O 5 1O 15 20 0 5 10 15 20 25 30 35 40
VGS Gate -to -Source Voltage (V) ata, Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
B) TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 0.75mH, Rs = 259, IAS = 22A.
04/30/09
IRF672
International
TO.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 22 - mV/°C Reference to 25°C, b = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.7 2.2 m9 Vss = 10V, Ir, = 28A ©
- 2.4 3.2 I/ss = 4.5V, ID = 22A C)
VGSW Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Vas, ID = 100pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, l/ss = 0V
- _ 150 Vos = 24V, Vas = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 150 - - S VDs = 15V, ID = 22A
q, Total Gate Charge - 36 54
0931 Pre-Vth Gate-to-Source Charge - 8.8 - Vos = 15V
0952 Post-l/th Gate-to-Source Charge - 3.9 - nC Vss = 4.5V
di Gate-to-Drain Charge - 11 - ID = 22A
ngdr Gate Charge Overdrive - 12 - See Fig. 15
st Switch Charge (Q982 + di) - 14.9 -
0035 Output Charge - 21 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 1.3 2.2 Q
tam) Turn-On Delay Time - 16 - Von = 15V, Vas = 4.5V ©
t, Rise Time - 22 - ns ID = 22A
ton Turn-Off Delay Time - 19 - Rs = 1.8Q
t Fall Time - 13 - See Fig. 17
Ciss Input Capacitance - 4700 - Ves = 0V
Cass Output Capacitance - 960 - pF Vos = 15V
C,ss Reverse Transfer Capacitance - 420 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 130 MOSFET symbol D
(Body Diode) A showing the H2:
Iss, Pulsed Source Current - - 220 integral reverse G c,
(Body Diode) s p-n junction diode. fl
VSD Diode Forward Voltage - 0.77 1.0 V Tu = 25°C, ls = 22A, Vas = 0V C)
trr Reverse Recovery Time - 24 36 ns Tu = 25°C, IF = 22A
0,, Reverse Recovery Charge - 39 59 nC di/dt = 260A/ps ©
Notes:
CO Pulse width S 400ps; duty cycle S 2%.
