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IRF6721STRPBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.
International
TOR Rectifier
o RoHS Compliant and Halogen Free CD
PD - 96133A
llRF6721SPbF
lRF6721STRPbF
DirectFETTM Power MOSFET Q)
Typical values (unless otherwise specified)
. Low Profile (
q Dual Sided Cooling Compatible OD 30V max e2UN max 5.1mQ@ 10V 8.5mQ@ 4.5V
q Ultra Low Package Inductance A tot di 0932 On tu, Vgsuh)
q Optimized for High Frequency Switching co 11nC 3.7nC 1.3nC 19nC 7.9nC 1.9V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for Control FET application0D "s.
0 Low Conduction and Switching Losses i-ti-ti-i-is-n 'sf'" _
0 Compatible with existing Surface MountTechniques (D D ltuir D H,» .
o 100% Rg tested k
SQ DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
IaiJISXISTI |MQ|MX|MT|MP| I I
Description
The IRF6721SPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The FF6721SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6721SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
His Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V © 14
ID @ T, = 70°C Continuous Drain Current, Vss @ 10V © 11 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V © 60
IBM Pulsed Drain Current s 110
EAS Single Pulse Avalanche Energy © 62 mJ
IAR Avalanche Current s 11 A
't 14.0
t"ii" sils..' 12.0
g g 10.0
$3), F, 8.0
J I', 6.0
l iii 4.0
- T J = 25°C - 2.0
J' 0.0
O 5 IO 15 20 0 4 8 12 16 20 24 28 32
VGS, Gate -to -Source Voltage (V) ata, Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
B) TC measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 1.1mH, Ra = 259, IAS-- 11A.
1
04/30/09
OD Click on this section to link to the appropriate technical paper.
IRF6721SPbF International
TO.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 22 - mV/°C Reference to 25°C, lo = 1mA
RDSwn) Static Drain-to-Source On-Resistance - 5.1 7.3 mo Vas = 10V, lo = 14A ©
- 8.5 10.9 I/ss = 4.5V, ID =11A C)
VGsm Gate Threshold Voltage 1.4 1.9 2.4 V Vos = Ves, ID = 25PA
AVGSUh/ATJ Gate Threshold Voltage Coefficient - -6.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- _ 150 vDS = 24V, Vas = OV, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 25 - - S Vos = 15V, b = 11A
q, Total Gate Charge - 11 17
0951 Pre-Vth Gate-to-Source Charge - 2.9 - Vos = 15V
Qgsg Post-l/th Gate-to-Source Charge - 1.3 - nC Vss = 4.5V
di Gate-to-Drain Charge - 3.7 - ID = 11A
ngd, Gate Charge Overdrive - 3.1 - See Fig. 15
st Switch Charge (Q952 + di) - 4.9 _
Qoss Output Charge - 7.9 - nC Vos = 16V, Vas = OV
Rs Gate Resistance - 2.1 3.7 Q
tom Turn-On Delay Time - 7.8 - VDD = 15V, Vas = 4.5V ©
t, Rise Time - 8.9 - ns ID = 11A
tam) Turn-Off Delay Time - 9.3 _ Re = 1.89
t Fall Time - 5.3 - See Fig. 17
Ciss Input Capacitance - 1430 - Ves = 0V
cu, Output Capacitance - 370 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 52 MOSFET symbol D
(Body Diode) A showing the L,t
ISM Pulsed Source Current - - 110 integral reverse G E
(Body Diode) © p-n junction diode. cl
vSD Diode Forward Voltage - 0.80 1.0 v Tu = 25°C, Is = IIA, Vas = 0V ©
trr Reverse Recovery Time - 17 26 ns Tu = 25°C, ' = 11A
l Reverse Recovery Charge - 19 29 n0 di/dt = 23OA/ps ©
Notes:
CO Pulse width S 400ps; duty cycle S 2%.
2
