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IRF6691TR1
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes.
PD - 95867D
IRF6691
HEXFET© Power MOSFET plus Schottky Diode
RDS(on) max t2g(typ.)
2.5mQ@1/ss = 4.5V 47nC
1.8mf2@Vss =1OV
International
TOR. Rectifier
0 Application Specific MOSFETs
o Integrates Monolithic Trench Schottky Diode
. Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses
q Low Reverse Recovery Losses
0 Low Switching Losses
0 Low Reverse Recovery Charge and Low Vf
. Low Profile (<0.7 mm)
. Dual Sided Cooling Compatible
. Compatible with existing Surface Mount Techniques MT
DirectFETTM ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
ISQISXISTI IMQIMXIII I I I
Description
The 1RF6691 combines IR's industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application noteAN-1 035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (Roam)! reverse recovery charge (On) and source to drain
voltage (VSD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage :12
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 180
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 32 A
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 26
IDM Pulsed Drain Current OD 260
PD @TA = 25°C Power Dissipation s 2.8
PD @TA = 70°C Power Dissipation s 1.8 W
PD @TC = 25°C Power Dissipation 89
Linear Derating Factor 0.022 WPC
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RNA Junction-to-Ambient ©00 - 45
ROJA Junction-to-Ambient SCO 12.5 -
RNA Junction-to-Ambient coco 20 - °C/W
Ros: Junction-to-Case COO) - 1.4
Risrecs Junction-to-PCB Mounted 1.0 -
Notes OD through are on page 10
1
11/16/05
IRF6691 International
IEER Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 1.0mA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 12 - mV/°C Reference to 25°C, ID = 10mA
Ros(on) Static Drain-to-Source On-Resistance - 1.8 2.5 mf2 Vas = 4.5V, ID = 12A ©
- 1.2 1.8 Vss--10V,lry=15A©
VGS(th) Gate Threshold Voltage 1.6 - 2.5 V l/rs = Vss, ID = 250uA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient -- -4.1 -- mV/°C ID = 10mA, reference to 25°C
-- -- 1.4 mA Vos = 20V, Vss = 0V
loss Drain-to-Source Leakage Current - - 500 PA Vos = 16V, Vss = 0V
- - 5 mA Vos = 16V, Vss = 0V, T1 = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 12V
Gate-to-Source Reverse Leakage - - -100 Vas = -12V
gfs Forward Transconductance 110 - - S Vos = 10V, ID = 26A
Qg Total Gate Charge - 47 71
0951 Pre-Vth Gate-to-Source Charge - 14 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 4.4 - nC Vas = 4.5V
di Gate-to-Drain Charge - 15 - b = 17A
ngd, Gate Charge Overdrive - 14 - See Fig. 17
st Switch Charge (0952 + di) - 19 -
Qoss Output Charge -- 30 -- nC Vos = 10V, Vss = 0V
Rs Gate Resistance - 0.60 1.5 Q
tum) Turn-On Delay Time - 23 --.- VDD = 16V, l/ss = 4.5V ©
tr Rise Time - 95 - ns b = 26A
td(off) Turn-Off Delay Time -- 25 -- Clamped Inductive Load
tr Fall Time - 10 _
Ciss Input Capacitance - 6580 - Vas = 0V
Coss Output Capacitance - 2070 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 840 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy - 230 mJ
IAR Avalanche Current LO _ 26 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 200 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- -- 260 integral reverse a
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - 0.65 V TJ = 25°C, ls = 25A, l/tss = 0V ©
trr Reverse Recovery Time - 32 48 ns T J = 25°C, IF = 25A
l Reverse Recovery Charge - 26 39 nC di/dt = 100A/ps ©
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