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IRF6678TR1
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes.
PD - 96979F
IRF6678
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
Tait, Rectifier
o RoHS compliant containing no lead or bormide co
o Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
VDss Vas RDS(on) RDS(on)
30V max t20V max 1.7mQ@ 10V 2.3mQ© 4.5V
0 Ultra Low Package Inductance ths tot tlsr, thrs th, 0055 'Kee
0 Optimized for High Frequency Switching co 43nC 15nC 4.0nC 46nC 28nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for for SyncFET Socket of Sync. Buck Converter co f
0 Low Conduction and Switching Losses 1 LETS]
0 Compatible with Existing Surface Mount Techniques O) D g . 2 D
T MX DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
Isalsxlsrl IMQIMIMTI I ll
Description
The IRF6678 combines the latest HEXFET© power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including RDSM and gate charge to minimize losses in the SyncFET socket.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
vss Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V © 30
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 24 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V © 150
IDM Pulsed Drain Current © 240
EAS Single Pulse Avalanche Energy GD 210 mJ
IAR Avalanche Current © 24 A
E 15 %
tn 10 3
o _ o d,
a. 5 Ps T J _ 125 C E
i" Rt. O
T J = 25°C a
O I I go
O 1 2 3 4 5 6 7 8 9 10 O 10 20 30 4O 50 60
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge mm
Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. CO Starting Tu = 25°C, L = 0.75mH, Rs = 259, IAS = 23A.
CD Click on this section to link to the DirectFET MOSFETs. © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © Tc measured with thermocouple mounted to top (Drain) of part.
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IRF6678 International
Tcm Rectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250HA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 1.7 2.2 m9 Vss = 10V, ID = 30A Cs)
- 2.3 3.0 Vss = 4.5V, ID = 24A s
VGS(th) Gate Threshold Voltage 1.35 - 2.25 v VDs = Ves. ID = 250uA
AVGSUm/ATJ Gate Threshold Voltage Coefficient - -6.3 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vas = 0V
- - 150 VDS = 24V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 100 - - S Vros = 15V, ID = 24A
A Total Gate Charge - 43 65
0931 Pre-Vth Gate-to-Source Charge - 12 - l/rs = 15V
0932 Post-Vth Gate-to-Source Charge - 4.0 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 15 ID = 24A
ngdr Gate Charge Overdrive - 12 - See Fig. 17
st Switch Charge (0952 + di) - 19 -
Qoss Output Charge - 28 - nC Vos = 16V, l/ss = 0V
Re Gate Resistance - 1.0 2.2 Q
tam) Turn-On Delay Time - 21 - VDD = 16V, l/ss = 4.5V S
t, Rise Time - 71 - ns Ir, = 24A
td(off) Turn-Off Delay Time - 27 - Clamped Inductive Load
t, Fall Time - 8.1 -
Ciss Input Capacitance - 5640 - Vas = 0V
Coss Output Capacitance - 1260 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 570 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the Lrg-,
ISM Pulsed Source Current - - 240 integral reverse Cl (tLl
(Body Diode) CO p-n junction diode. cl
Va:, Diode Forward Voltage - 0.78 1.2 V To = 25°C, ls = 24A, Ves = 0V (S)
trr Reverse Recovery Time - 43 65 ns TJ = 25°C, h: = 24A
a,, Reverse Recovery Charge - 46 69 nC di/dt = 100A/ps S
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
(9 Pulse width 5 400ps; duty cycle I 2%.
2
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