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IRF6662TR1IRN/a200avaiLeaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.


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IRF6662TR1
Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.
PD - 97039A
IRF6662
DirectFET"VI Power MOSFET ©
Typical values (unless otherwise specified)
International
Tait, Rectifier
0 Lead and Bromide Free co
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
q Ultra Low Package Inductance 09 tot di vss(th)
0 Optimized for High Frequency Switching C) 22nC 6.8nC 3.9V
0 Ideal for High Performance Isolated Converter
Primary Switch Socket
0 Optimized for Synchronous Rectification I . , l
VDss Vas RDS(on)
100V max t201/ max 17.5mQ@ 10V
0 Low Conduction Losses
0 Compatible with existing Surface Mount Techniques OD
_ - DirectFET'" ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)OD
lsalsxlsrl IMalMxlMTlii!iigl I ll
Description
The IRF6662 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETm packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal inputTelecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
vss Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V © 8.3
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 6.6 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V © 47
IBM Pulsed Drain Current S 66
EAS Single Pulse Avalanche Energy © 39 md
IAR Avalanche Current S 4.9 A
100 'iii'] 12.0 l I
ID I = 4.9A
a 80 ,8 10.0 _D__VDS=I8OV~ ',,,,w'''''"
g 60 g VDS= 20V)
ac 40 8 6.0 "
a 5.3 4.0 f
i 20 o 2.0
TJ = 25°C a e,/''"
o go 0.0
4 6 8 10 12 14 16 o 5 10 15 20 25
VGS Gate -to -Source Voltage (V) As Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs.
. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 3.2mH, Rs = 259, lAs = 4.9A.
1
1 1/7/05
http:l/www.lo_q.com/
IRF6662
Static © T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250PA
ABN/oss/AT, Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance 17.5 22 m9 Ves = 10V, ID = 8.2A co
Vesm) Gate Threshold Voltage 3.0 - 4.9 V I/ce = I/ss, ID = 100PA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -9.7 - mV/°C
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Ves = 0V
- - 250 l/ras = 80V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 11 - - S Vos = 10V, ID = 4.9A
q, Total Gate Charge - 22 31
0931 Pre-Vth Gate-to-Source Charge - 4.9 - Vos = 50V
0952 Post-Vth Gate-to-Source Charge - 1.2 - nC Veg = 10V
di Gate-to-Drain Charge - 6.8 10 ID = 4.9A
ngd, Gate Charge Overdrive - 9.1 - See Fig. 17
st Switch Charge (0952 + di) - 8.0 -
Qoss Output Charge - 11 --. nC VDs = 16V, l/ss = 0V
Rs Gate Resistance - 1.2 - Q
tdwn) Turn-On Delay Time - 11 - VDD = 50V, Ves = 10V ©
t, Rise Time - 7.5 - b = 4.9A
td(off) Turn-Off Delay Time - 24 - ns RG=6.2Q
tf Fall Time - 5.9 -
ciss Input Capacitance - 1360 - Ves = 0V
Coss Output Capacitance - 270 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz
Coss Output Capacitance - 1340 - Ves = 0V, VDS = 1.0V, f=1.0MHz
Coss Output Capacitance - 160 - I/ss = 0V, I/os = 80V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 66 integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 4.9A, I/ss = 0V co
trr Reverse Recovery Time - 34 51 ns To = 25°C, IF = 4.9A, VDD = 50V
Q,, Reverse Recovery Charge - 50 75 nC di/dt = 1OOA/ps OD
Notes:
co Pulse width I 400ps; duty cycle f 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
http:l/www.lo_q.com/

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