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IRF6644TR1PBF-IRF6644TRPBF
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes.
international
TOR Rectifier
PD - 97094A
IRF6644PbF
IRF6644TFIPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHS Compliant OD Voss Vas Ros
o Lead-Free (Qualified up to 260°C Reflow) (on)
o Application Specific MOSFETs 100V max t20V max 10.3m§2@ 10V
0 Ideal for High Performance Isolated Converter 09 tot di Vgs(th)
Primary Switch Socket 35nC 11.5nC 3.7V
o Optimized for Synchronous Rectification
0 Low Conduction Losses _
0 High Cdv/dt Immunity l _ s I
0 Low Profile (
0 Dual Sided Cooling Compatible co s
0 Compatible with existing Surface Mount Techniques co MN DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
SH SJ SP MZ [III]
Description
The IRF6644PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
Vrss Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V (3 10.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V C30 8.3 A
ID @ To = 25°C Continuous Drain Current, Ves @ 10V GD 60
IBM Pulsed Drain Current (S) 82
EAS Single Pulse Avalanche Energy © 220 mJ
IAR Avalanche Current (5) 6.2 A
0.08 ' 13
ID = 6.2A
A a V = 7.0V
0% 0.06 g 12 GS
jjj.. "is'"
(D V V = 8.0V
a 0.04 8 11 GS
tr: (I
E,' TJ=125°C E,' VGS=10V
g 0.02 __, ca. 10
TJ =|25°C VGS = 15V
0.00 9
4 6 8 10 12 14 16 0 4 8 12 16 20
VGS, Gate-to-Source Voltage (V) ID, Drain Current (A)
Fig l. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current
Notes:
CO Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
http:l/www.lo_q.com/
© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L =12mH, Rs = 259, IAS = 6.2A.
8/18/06
IRF6644PbF International
IEZR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 10.3 13 mn I/ss = 10V, ID = 10.3A C)
VGS(th) Gate Threshold Voltage 2.8 - 4.8 V VDS = I/ss, ID = 150pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -10 - mV/°C
bss Drain-to-Source Leakage Current - - 20 PA VDS = 100V, Ves = 0V
- - 250 VDS = 80V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 15 - - S VDS = 10V, ID = 6.2A
Qg Total Gate Charge - 35 47
0931 Pre-Vth Gate-to-Source Charge - 8.0 - VDS = 50V
0932 Post-Vth Gate-to-Source Charge - 1.6 - nC Ves = 10V
di Gate-to-Drain Charge - 11.5 17.3 ID = 6.2A
ngd, Gate Charge Overdrive - 13 - See Fig. 15
st Switch Charge (0952 + di) - 13.1 -
Qoss Output Charge - 17 - nC Vros = 16V, l/ss = 0V
Rs Gate Resistance - 1.0 2.0 Q
tum”) Turn-On Delay Time - 17 - VDD = 50V, I/ss = 10V OD
1, Rise Time - 26 - ID = 6.2A
td(oit) Turn-Off Delay Time - 34 - ns RG=629
t, Fall Time - 16 -
Ciss Input Capacitance - 2210 - Vss = 0V
Coss Output Capacitance - 420 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Coss Output Capacitance - 2120 - l/ss = 0V, Vros = 1.0V, f=1.0MHz
Coss Output Capacitance - 240 - I/ss = 0V, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 10 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current - - 82 integral reverse
(Body Diode) © p-n junction diode.
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C. ls = 6.2A, Ves = 0V co
trr Reverse Recovery Time - 42 63 ns To = 25°C. IF = 6.2A, VDD = 50V
Qrr Reverse Recovery Charge - 69 100 no di/dt = 100A/ps OD
Notes:
S Repetitive rating; pulse width limited by max. junction temperature.
(s) Pulse width S 400ps; duty cycle 3 2%.
2
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