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IRF6638TR1PBF-IRF6638TRPBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
PD - 97239
International IFlF6638PbF
TOR Rectifier IFlF6638TRPbF
o RoHs Compliant co DirectFETTM Power MOSFET ©
0 Lead-Free (Qualified up to 260°C Reflow) Typical values (unless otherwise specified)
0 Application Specific MOSFETs VDSS Vas RDS(on) RDS(on)
0 Ideal for CPU Core DC-DC Converters 30V max t201/ max 2.2mQ© 10V 3.0mQ@ 4.5V
0 Low Conduction Losses Qg tot di agsst er Qoss Vgsah)
q High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V
0 Low Profile (
0 Dual Sided Cooling Compatible co
0 Compatible with existing Surface Mount Techniques C)
dt, h:
MX DirectFETTM [SOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)©
lsalsxlsrl IMalli!iBlMrlMPl ll
Description
The IRF6638PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGs Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V © 25
ID © TA = 70°C Continuous Drain Current, Vss @ 10V © 20 A
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V © 140
IDM Pulsed Drain Current G) 200
EAS Single Pulse Avalanche Energy © 37 md
IAR Avalanche Current Cs) 20 A
A ID = 25A 8,
a 8 .s,
"CC., >
fi.. 6 g
f 4 l - (.3
E N "ss,.....,, J" 125°C S
.9 Is, ' ' a',
D. 'u-.. -
>. 2 tO
T J = 25°C dy
0 I I I go
0 1 2 3 4 5 6 7 8 910111213141516 0 5 10 15 20 25 30 35
VGS Gate -to -Source Voltage (V) % Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.19mH, Rs = 25Q, lAs = 20A.
1
07/13/06
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IRF6638PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Bl/css Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, b = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 22 - mV/°C Reference to 25°C. ID = 1mA
RDSwn) Static Drain-to-Source On-Resistance - 2.2 2.9 m9 I/ss = lov, ID = 25A ©
- 3.0 3.9 Vss = 4.5V, ID = 20A Cr)
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = Vss, ID = 100pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA 1/ros = 24V, Ves = 0V
- - 150 I/rs = 24V, I/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 105 - - S VDs = 15V, ID = 20A
q, Total Gate Charge - 30 45
0951 Pre-Vth Gate-to-Source Charge - 6.7 - VDS = 15V
Qgsg Post-Vth Gate-to-Source Charge - 3.2 - nC Vas = 4.5V
di Gate-to-Drain Charge - 11 - ID = 20A
090d, Gate Charge Overdrive - 9.1 - See Fig. 15
st Switch Charge (0952 + di) - 14.2 -
Qoss Output Charge - 18.4 - nC VDs = 16V, Ves = 0V
HG Gate Resistance - 1.3 - Q
td(on) Turn-On Delay Time - 19 - VDD = 16V, l/ss = 4.5V co
t, Rise Time - 45 - ID = 20A
td(ott) Turn-Off Delay Time - 28 - ns Clamped Inductive Load
t, Fall Time - 6.2 - See Fig. 16 & 17
Ciss Input Capacitance - 3770 - I/ss = 0V
Coss Output Capacitance - 810 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 410 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3.5 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 200 integral reverse G l
(Body Diode) Cs) p-n junction diode. R
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 20A, Ves = 0V co
tr, Reverse Recovery Time - 19 29 ns TJ = 25°C, IF = 20A
Q,, Reverse Recovery Charge - 27 41 nC di/dt = 300A/ps C) See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width I 400ps; duty cycle I 2%.
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