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IRF6633
DirectFET Power MOSFET
international
TOR Rectifier
o RoHs Compliant Containing No Lead and Bromide co
o Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
0 Ultra Low Package Inductance
0 Optimized for High Frequency Switching co
0 Ideal for CPU Core DC-DC Converters
0 Optimized for both Sync.FET and some Control FET
applicationC0
0 Low Conduction and Switching Losses
0 Compatible with existing Surface Mount Techniques co
PD - 96989
IRF6633
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
RDS(on)
RDS(on)
20V max
e2UN max
4.1mQ@ 10V
7.0mQ@ 4.5V
C39 tot
Vgsuh)
1ttss'
DirectFETTM lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
SQ SX ST MQ
Description
The IRF6633 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Cs 16
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V (3) 13 A
ID @ To = 25°C Continuous Drain Current, l/tss @ 10V CO 59
IBM Pulsed Drain Current s 132
EAS Single Pulse Avalanche Energy © 41 mJ
IAR Avalanche Current s 13 A
20 I Si" 12 I l
= V I = 13A V = 16V
tT ID 16A 'sl,) 10 D vggémv
g 15 g ji',',',,',
"ii,'" 't 8 7
7n N. b' A/
cu 10 N 8 6 f
. ss,:,:::::: Tu=125''C b //
a T 4 /
O (D f
- 5 _...-, - /_/
/'ili 3 2 J"''"'''"""'
T J = 25°C a
0 I go 0
2.0 4.0 6.0 8.0 10.0 0 4 8 12 16 20 24
VGS, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
Notes: Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 0.51mH, Rs = 259, [AS =13A.
6/2/05
IRF663
International
IEZR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 16 - mV/°C Reference to 25°C, ID = 1mA
Rome”) Static Drain-to-Source On-Resistance - 4.1 5.6 m9 Vss = 10V, ID = 16A co
- 7.0 9.4 I/ss = 4.5V, b = 13A OD
VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V VDs = Ves, ID = 250UA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 16V, I/ss = 0V
- - 150 l/DS = 16V, I/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 35 --- --- S Vos = 10V, ID = 13A
q, Total Gate Charge - 11 17
0981 Pre-Vth Gate-to-Source Charge - 3.3 - I/cs = 10V
0932 Post-Vth Gate-to-Source Charge - 1.2 - nC VGS = 4.5V
di Gate-to-Drain Charge - 4.0 - ID = 13A
ngd, Gate Charge Overdrive - 2.5 - See Fig. 15
st Switch Charge (0932 + di) - 5.2 -
Qoss Output Charge - 8.8 - nC VDs = 10V, l/ss = 0V
Rs Gate Resistance - 1.5 - Q
tdmn) Turn-On Delay Time - 9.7 --- VDD = 16V, Vas = 4-5V C)
t, Rise Time - 31 - ID = 13A
tom Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 4.3 -
Ciss Input Capacitance - 1250 - Ves = 0V
Coss Output Capacitance - 630 - pF I/os = 10V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 52 MOSFET symbol D
@TC=25°C (Body Diode) A showing the It
ISM Pulsed Source Current - - 132 integral reverse G (tLi,
(Body Diode) © p-n junction diode. fl
VSD Diode Forward Voltage - 0.8 1.0 V T, = 25°C. ls = 13A, l/ss = ov OD
trr Reverse Recovery Time - 18 27 ns T, = 25°C, IF = 13A
Qrr Reverse Recovery Charge - 32 48 no di/dt = 500A/ps CO
Notes:
co Pulse width 3 400ps; duty cycle S 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
