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IRF6626-IRF6626TR1PBF-IRF6626TRPBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes.
PD - 97218
IRF6626PbF
IRF6626TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
Tait, Rectifier
o RoHs Compliant (O
o Lead-Free (Qualified up to 260°C Reflow) Voss Vas RDs(on) RDS(on)
dt Application Specific MOSFETs 30V max t20V max 4.0mg2@ 10V 5.2mg2@ 4.5V
0 Ideal for CPU Core DC-DC Converters
Q Q Q Q a V
0 Low Conduction Losses il tot gd 952 rr oss gsith)
0 High Cdv/dt Immunity 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
o Low Profile (<0.7mm)
o Dual Sided Cooling Compatible C) 'Cir
0 Compatible with existing Surface Mount Techniques co 1 irs., S D ‘34!“
g "'1 .
ST DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXIGTI IMQIMXIMTI I I ll
Description
The IRF6626PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MlCRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6626PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V B) 16
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V B 13 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 72
IBM Pulsed Drain Current s 130
EAS Single Pulse Avalanche Energy © 24 mJ
IAR Avalanche Current s 13 A
15 'i'
ID = 16A m
g., To
"E" 10 >
8 'ss TJ = 125°C g
a 5 "s--,,. S
.s,2, T 25°C is
13 J o
3 4 5 6 7 8 0 IO 20 30
VGS, Gate -to -Source Voltage (V) % Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
© TC measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting To = 25°C, L = 0.29mH, Rs = 259, MS = 13A.
1
05/29/06
C) Click on this section to link to the appropriate technical paper.
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IRF6626PbF International
Tcm Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 4.0 5.4 m9 Vas = 10V, ID = 16A ©
- 5.2 7.1 Vas = 4.5V, ID = 13A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.35 V Vros = Ves. ID = 250pA
AVGS(,m/ATJ Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vas = 0V
- - 150 l/rs = 24V, Ves = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 64 - - S 1/ros = 15V, ID = 13A
Qg Total Gate Charge - 19 29
0951 Pre-Vth Gate-to-Source Charge - 5.2 - VDs = 15V
0932 Post-Vth Gate-to-Source Charge - 1.6 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 6.7 ID = 13A
0900., Gate Charge Overdrive - 5.5 - See Fig. 15
st Switch Charge (0952 + di) - 8.3 -
Qoss Output Charge - 13 - nC VDS = 16V, Ves = 0V
Rs Gate Resistance - - 1.5 Q
td(on) Turn-On Delay Time - 13 - VDD = 16V, l/ss = 4.5V OD
t, Rise Time - 15 - ID = 13A
tdmm Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 4.5 - See Fig. 16 & 17
Ciss Input Capacitance - 2380 - Ves = 0V
Coss Output Capacitance - 530 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 52 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 130 integral reverse (5 (n/
(Body Diode) © p-n junction diode. q
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 13A, Ves = 0V co
trr Reverse Recovery Time - 15 23 ns TJ = 25°C, IF = 13A
Q,, Reverse Recovery Charge - 5.4 8.1 nC di/dt = 100A/ps co See Fig. 18
Notes:
S Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle 3 2%.
2
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