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IRF6622TR1
Leaded A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 59 amperes.
. PD-97199
International
TOR Rectifier IRF6622
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHs Compliant Containing No Lead and Bromide co
. VDSS Vas RDS(on) RDS(on)
o Low Profile (<0.6 mm)
D ISid d C li C tibl co 25V max e2Ol max 4.9mQ@ 10V 6.8mQ© 4.5V
0 ua I e oo mg ompal e
0 Ultra Low Package Inductance th, tot tu, 0952 Q" tu, Vgsith)
0 Optimized for High Frequency Switching co 11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for Control FET Socket co -'''s,
0 Low Conduction and Switching Losses f-V-i,--,'-;'--] dtp h ..
0 Compatible with existing Surface Mount Techniques co D G b-LI s o H; fr, ''
SQ DirectFET"' lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
liimlsxlsTl |MQ|MX|MT|MP| I I l
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 25 V
Vas Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V © 15
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V © 12 A
ID @ To = 25°C Continuous Drain Current, Vcs @ 10V © 59
IBM Pulsed Drain Current s 120
EAS Single Pulse Avalanche Energy © 13 md
IAR Avalanche Current S 12 A
|D=15A
TJ = 125°C
Typical RDS(on) (m9)
TJ=25°C
VGS~ Gate-to-Source Voltage (V)
3 4 5 6 7 8 9 0 24 68101214
VGS Gate -to -Source Voltage (V) % Total Gate Charge (nC)
Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T, = 25°C, L = 0.18mH, Rs = 25Q, lAs = 12A.
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IRF6622 International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 17 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 4.9 6.3 m9 Vss = 10V, ID = 15A C)
- 6.8 8.9 Vss = 4.5V, ID = 12A C)
l/sam) Gate Threshold Voltage 1.35 1.8 2.35 V VDs = Ves. ID = 25pA
AVGSUm/ATJ Gate Threshold Voltage Coefficient - -5.9 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 PA VDS = 20V, I/ss = 0V
- - 150 I/os = 20V, I/as = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 55 - - S Vos = 13V, ID = 12A
q, Total Gate Charge - 11 17
0931 Pre-Vth Gate-to-Source Charge - 2.5 - VDS = 13V
Qgsg Post-Vth Gate-to-Source Charge - 1.6 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 3.8 - '0 = 12A
ngd, Gate Charge Overdrive - 3.1 - See Fig. 15
st Switch Charge (0952 + di) - 5.4 -
Qoss Output Charge - 7.7 - nC Vos = 16V, Ves = 0V
Rs Gate Resistance - 1.8 3.1 Q
tam) Turn-On Delay Time - 13 - VDD = 13V, l/ss = ASN ©
t, Rise Time - 87 - ns lo = 12A
td(0ff) Turn-Off Delay Time - 14 - Clamped Inductive Load
t, Fall Time - 5.6 -
Ciss Input Capacitance - 1450 - Ves = 0V
Coss Output Capacitance - 380 - pF VDs = 13V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.7 MOSFET symbol D
(Body Diode) A showing the Cr,
G, Pulsed Source Current - - 120 integral reverse G E
(Body Diode) © p-n junction diode. cl
Va, Diode Forward Voltage - - 1.0 v TJ = 25°C, Is = 12A, I/ss = 0V OD
tr, Reverse Recovery Time - 10 15 ns TJ = 25°C, ' = 12A
a,, Reverse Recovery Charge - 7.1 11 nC di/dt = 500A/ps OD
Notes:
(D Pulse width S 400ps; duty cycle S 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
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