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IRF6620-IRF6620TR1
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 95823C
International
IeaR Rectifier IRF6620
0 Application Specific MOSFETs HEXFET® Power MOSFET
0 Ideal for CPU Core DC-DC Converters
. Voss RDS(on) max tlg(typ0
0 Low Conduction Losses
q Low Switching Losses 20V 2.7mQ@Vss = 10V 28nC
0 Low Profile (
0 Dual Sided Cooling Compatible
o Compatible with Existing Surface Mount
Techniques H; S I
o G eu' D
MX DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ISQISXISTI IMQIIIEEIMTI I ll
Description
The IRF6620 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, intra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t20
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V © 150
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V co 27 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 22
IDM Pulsed Drain Current co 220
PD @TA = 25°C Power Dissipation GD 2.8
PD @TA = 70°C Power Dissipation © 1.8 W
PD @Tc = 25°C Power Dissipation © 89
EAS Single Pulse Avalanche Energy© 39 mJ
IAR Avalanche Current co 22 A
Linear Derating Factor 0.017 W/°C
TJ Operating Junction and -40 to + 150 =
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Ambient ©© - 45
RBJA Junction-to-Ambient ©0125 -
ReJA Junction-to-Ambient (0. 20 - °C/W
RGJC Junction-to-Case Ct)(3) - 1.4
RMPCB Junction-to-PCB Mounted 1.0 -
Notes co through are on page 2
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IRF6620 International
IEZR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 16 - mV/°C Reference to 25°C, ID = 1mA
RDSW) Static Drain-to-Source On-Resistance - 2.1 2.7 m9 I/ss = 10V, ID = 27A ©
- 2.8 3.6 I/ss = 4.5V, ID = 22A ©
VGS(th) Gate Threshold Voltage 1.55 - 2.45 V VDS = I/ss, ID = 250pA
AVGS(,m/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
bss Drain-to-Source Leakage Current - - 1.0 pA 1/ros = 16V, I/ss = 0V
- - 150 VDS =16V,Vss = 0V, Tr, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 110 - - S Vos = 10V, ID = 22A
Qg Total Gate Charge - 28 42
0951 Pre-Vth Gate-to-Source Charge - 9.5 - VDS = 10V
0932 Post-Vth Gate-to-Source Charge - 3.5 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 8.8 - ID = 22A
ngd, Gate Charge Overdrive - 6.2 - See Fig. 15
st Switch Charge (0952 + di) - 12 -
Qoss Output Charge - 16 - nC l/ras = 10V, l/ss = 0V
tion) Turn-On Delay Time - 18 - VDD = 16V, VGS = 4.5V ©
t, Rise Time - 80 - ID = 22A
tam) Turn-Off Delay Time - 20 - ns Clamped Inductive Load
t, Fall Time - 6.6 -
Ciss Input Capacitance - 4130 - I/ss = 0V
Coss Output Capacitance - 1160 - pF I/os = 10V
Crss Reverse Transfer Capacitance - 560 - f = 1.0MHz
Diode Characteristics D
Parameter Min. Typ. Max. Units Conditions /i" 1:8
Is Continuous Source Current@ TC=25°C - - 110 MOSFET symbol "a-tli-j,-,
(Body Diode) A showing the s
ISM Pulsed Source Current - - 220 integral reverse
(Body Diode) CO p-n junction diode.
I/s, Diode Forward Voltage - 0.8 1.0 V TJ = 25°C, ls = 22A, l/ss = 0V ©
trr Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 22A
Qrr Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
Notes:
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
© Starting TJ = 25°C, L = 0.16mH, back and with small clip heatsink.
Rs = 259, has = 22A. TC measured with thermal couple mounted to top (Drain) of
© Pulse width I 400ps; duty cycle I 2%. part.
© Surface mounted on 1 in. square Cu board. Re is measured at Tu of approximately 90°C.
CO Repetitive rating; pulse width limited by
max. junction temperature.
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