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IRF6619IRN/a95avaiDirectFET Power MOSFET


IRF6619 ,DirectFET Power MOSFETapplications.Absolute Maximum RatingsParameter Max. UnitsV 20Drain-to-Source Voltage VDS ±20V Gate- ..
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IRF6619
DirectFET Power MOSFET
PD - 96917
International
TOR Rectifier IRF6619
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
0 Ultra Low Package Inductance
Voss Vas RDS(on) RDS(on)
20V max t20V max 1.65mQ@ 10V 2.2mS2@ 4.5V
0 Optimized for High Frequency Switching above 1MHz co 09 tot tu, Asst Q" tu,, Vgsith)
0 Ideal for CPU Core DC-DC Converters 38nC 13nC 3.5nC 18nC 22nC 2.0V
0 Optimized for Sync. FET socket of Sync. Buck Converter© '
0 Low Conduction Losses " i 1 '
0 Compatible with existing Surface Mount Techniques co 1 r7 D
L iri'
MX DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)C)
SQ SX ST MQ m MT
Description
The IRF6619 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The lRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 20 V
Vss Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V © 30
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 24 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V © (Package Limited) 150
IDM Pulsed Drain Current (3) 240
EAS (Thermallylimited) Single Pulse Avalanche Energy co 240 mJ
IAR Avalanche Current © See Fig. 14, 15, 17a, 17b, A
EAR Repetitive Avalanche Energy © mJ
6.0 . fii" 12 l I l
ID = 30A 8, ID: 16A YDS=16Y
a 5.0 l - g 10 VDS=10V "
"iz,'" 4 o t 8 8 'v'"
"Th . N 's A,
f \TJ =125°C c8 6 ,,,t'5
- 3.0 'ss,. é / tf''"
r- 2.0 _ 'ii, 2 /""'
T J = 25°C to
1.0 > 0
2.0 4.0 6.0 8.0 10.0 0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V) QG T otal G at e Ch arg e (nC)
N t Fig l. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
. . . . . . GD Limited by TJmax, starting To = 25°C, L = 0.86mH, Rs = 259, IAS =
OD Click on this section to link to the appropriate technical paper. 24A, VGS =1OV. Part not recommended for use above this value.
CD Click on this section to link to the DirectFET Website. © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © TC measured with thermocouple mounted to top (Drain) of part.
1
2/10/05
IRF661
International
IEZR Rectifier
Static tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 14 - mV/°C Reference to 25°C, ID = 1mA
RDson) Static Drain-to-Source On-Resistance - 1.65 2.2 m9. Vss = 10V, ID = 30A s
- 2.2 3.0 Ves = 4.5V, ID = 24A 6)
VGSW Gate Threshold Voltage 1.55 - 2.45 V VDS = l/ss, ID = 250PA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
IDss Drain-to-Source Leakage Current - --.- 1.0 PA VDs = 16V, l/ss = 0V
- - 150 VDS=16V,VGS=0V,TJ=125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = ALUN
gfs Forward Transconductance 89 - - S VDS = 10V, ID = 24A
q, Total Gate Charge - 38 57
0931 Pre-Vth Gate-to-Source Charge - 10.2 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 3.5 - nC Ves = 4.5V
di Gate-to-Drain Charge - 13.2 - b = 16A
ngd, Gate Charge Overdrive - 11.1 - See Fig. 17
st Switch Charge (0932 + di) - 16.7 -
Qoss Output Charge - 22 - nC Vos = 10V, Ves = 0V
Rs Gate Resistance - - 2.3 Q
tdwn) Turn-On Delay Time - 21 - VDD = 16V, Vss = 4.5V s
t, Rise Time - 71 - ID = 24A
tom Turn-Off Delay Time - 25 - ns Clamped Inductive Load
t, Fall Time - 9.3 -
Ciss Input Capacitance - 5040 - Ves = 0V
Coss Output Capacitance - 1580 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 780 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 240 integral reverse G E
(Body Diode) © p-n junction diode. fl
VSD Diode Forward Voltage - 0.8 1.0 V Tu = 25°C, ls = 24A, l/ss = 0V s
trr Reverse Recovery Time - 29 44 ns Tu = 25°C, IF = 24A
Qrr Reverse Recovery Charge - 18 27 nC di/dt = 100A/ps s
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.

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