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IRF6618TR1PBF
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.
PD - 97240A
International
" . . IRF6618PbF
19R Fuctifier |RF6618"RPbF
q RoHs fom.plianl FD DirectFETTM Power MOSFET Q)
q Lead-Free (Qualified up to 260°C Reflow)
q Application Specific MOSFETs Voss Vas RDS(on) RDS(on)
q Ideal forCPU Core DC-DC Converters 30V max t20V max 2.2mQ© 10V 3.4mQ© 4.5V
q Low Conduction Losses A tot di Q952 ta,, Qoss Vgs(th)
q High Cdv/dt Immunity 45no 1sk 4.0-nC 46nC 28nC /iuv
0 Low Profile (
q Dual Sided Cooling Compatible C) I L “x
q Compatible with existing Surface MountTechniques C) S.ri,
D '~§;--._
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details) MT DirectFETm lSOMETRIC
salsxlsTl IMQIMXI-‘I I I I
Description
The IRF6618PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, intra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter‘s SyncFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, VGS @ 10V © 170
ID © TA = 25°C Continuous Drain Current, VGS @ 10V © 30 A
In © TA = 70°C Continuous Drain Current, Ves © 10V © 24
IBM Pulsed Drain Current s 240
EAS Single Pulse Avalanche Energy © 210 mJ
IAR Avalanche Current co 24 A
a 5 .,5s's.'
"C.., 4 >
E T J = 125°C 5
8 3 i
T,' 2 S,.
.5 1 T J = 25°C 0
2 3 4 5 6 7 8 9 10 0 IO 20 30 40 50 60
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
C) Click on this section to link to the appropriate technical paper. © TC measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting Tu = 25°C, L = 0.75mH, RG = 259, IAS-- 24A.
1
08/17/07
IRF6618PbF
International
1:0.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 1.7 2.2 mg Vas = 10V, ID = 30A co
- - 3.4 l/ss = 4.5V, ID = 24A co
VGS(1h) Gate Threshold Voltage 1.35 1.64 2.35 V Vos = Vas, ID = 250pA
AVGSah/ATJ Gate Threshold Voltage Coefficient - -5.7 - mV/°C
- - 5.0 Vos = 30V, Vss = 0V
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage --.- - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 100 - - S Vos = 15V, ID = 24A
q, Total Gate Charge - 43 65
0931 Pre-Vth Gate-to-Source Charge - 12 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 4.0 - nC Vss = 4.5V
di Gate-to-Drain Charge - 15 23 ID = 24A
ngdr Gate Charge Overdrive - 12 - See Fig. 14
asw Switch Charge (0952 + as) - 19 -
QoSS Output Charge - 28 - nC Vos = 15V, Vas = 0V
Re Gate Resistance - 1.0 2.2 Q
tam") Turn-On Delay Time - 21 - VDD = 15V, Vss = 4.5V co
t, Rise Time - 71 - ID = 24A
tdom Turn-Off Delay Time - 27 - ns Clamped Inductive Load
t, Fall Time - 8.1 - See Fig. 15 & 16
Ciss Input Capacitance - 5640 - Vas = 0V
Coss Output Capacitance - 1260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 570 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) G) p-n junction diode. S
Vso Diode Forward Voltage - 0.78 1.2 v T J = 25°C, ls = 24A, Vas = ov ©
trr Reverse Recovery Time - 43 65 ns T J = 25°C, IF = 24A
a,, Reverse Recovery Charge - 46 69 nC di/dt = 100A/us © See Fig. 17
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width s: 400ps; duty cycle S 2%.
