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IRF6613TR1PBF
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.
PD - 97087A
lnfrgm'gpd IFlF6613PbF
1aR och KN'" IRF6613TRPbF
DirectFETTM Power MOSFET ©
o RoHS Compliant OD
o Lead-Free (Qualified up to 260°C Reflow) Voss RDS(on) max Qg(typ0
0 Application Specific MOSFETs 40V 3.4mQ@1/ss = 10V 42nC
0 Ideal for CPU Core DC-DC Converters 4.1mQ@Vss = 4.5V
0 Low Conduction Losses
0 High Cdv/dt Immunity
0 Low Profile (<0.7mm)
0 Dual Sided Cooling Compatible co
0 Compatible with existing Surface Mount Techniques co
DirectFETrM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ISOISXISTI IMQIMXIII I I I
Description
The IRF6613PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage t20
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V © 150
ID © TA = 25°C Continuous Drain Current, Ves © 10V © 23 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V (0 18
IBM Pulsed Drain Current © 180
PD @Tc = 25°C Power Dissipation © 89
Pro @TA = 25°C Power Dissipation © 2.8
PD @TA = 70°C Power Dissipation © 1.8 W
EAS Single Pulse Avalanche Energy 200 mJ
IAR Avalanche Current © 18 A
Linear Derating Factor © 0.022 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RGJA Junction-to-Ambient CM)) - 45
RNA Junction-to-Ambient CrrD 12.5 -
ReJA Junction-to-Ambient (DOD 2O - ''C/W
Roos Junction-to-Case ©Q) - 1.4
Rarecs Junction-to-PCB Mounted 1.0 -
Notes co through & are on page 2
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IRF6613PbF International
IEZR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 38 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 2.6 3.4 m9 Ves = 10V, ID = 23A 6)
- 3.1 4.1 l/ss = 4.5V, ID =18A s
VGS(th) Gate Threshold Voltage 1.35 - 2.25 V I/rss = VGS, ID = 250PA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 32V, I/ss = 0V
- - 150 VDS = 32v, l/ss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 93 - - S I/rss = 15V, ID = 18A
A Total Gate Charge - 42 63
0951 Pre-Vth Gate-to-Source Charge - 11.5 - Vos = 20V
0952 Post-Vth Gate-to-Source Charge - 3.3 - nC VGS = 4.5V
di Gate-to-Drain Charge - 12.6 - ID = 18A
ngd, Gate Charge Overdrive - 14.6 - See Fig. 6 and 16
st Switch Charge (0952 + di) - 15.9 -
Qoss Output Charge - 22 - nC l/ras = 16V, Vss = 0V
tdmn, Turn-On Delay Time - 18 - VDD = 16V, I/as = 4.5V s
t, Rise Time - 47 - ID = 18A
tom Turn-Off Delay Time - 27 - ns Clamped Inductive Load
t, Fall Time - 4.9 -
Ciss Input Capacitance - 5950 - VGS = 0V
Coss Output Capacitance - 990 - pF l/ras = 15V
Crss Reverse Transfer Capacitance - 460 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the ’7]:
G, Pulsed Source Current - - 180 integral reverse G Ills,
(Body Diode) © p-n junction diode.
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 18A, Vss = 0V (S
t,, Reverse Recovery Time - 38 57 ns T J = 25°C, IF = 18A
Q,, Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps s
Notes:
OD Click on this section to link to the appropriate technical paper. © Surface mounted on 1 in. square Cu board.
© Click on this section to link to the DirectFET Website. © Used double sided cooling, mounting pad.
© Repetitive rating; pulse width limited by max. junction temperature. Mounted on minimum footprint full size board with metalized
© Starting To = 25°C, L = 1.2mH, Rs = 259, IAS = 18A. back and with small clip heatsink.
@ Pulse width g 400ps; duty cycle g 2%. © Tc measured with thermal couple mounted to top (Drain) of part.
& Ro is measured at Tu of approximately 90°C.
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