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IRF6612TR1PBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes.
PD - 97215
International IRF6612PbF
TOR, Rectifier IF1F661TRPbF
DirectFET"n Power MOSFET Q)
o RoHs Compliant OD Typical values (unless otherwise specified)
o Lead-Free (Qualified up to 260°C Reflow) VDss Vtss Rrosion) RDS(on)
© Application Specific MOSFETs 30V max :2OV max 2.5mQ@ 10V 3.4mQ@ 4.5V
0 Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses th, tot thr, 0952 Q,, tu, vgsah)
q High Cdv/dt Immunity 30nC 10nC 2.9nC 8.1nC 18nC 1.8V
o Low Profile (
0 Dual Sided Cooling Compatible co
0 Compatible with existing Surface Mount Techniques co
DirectFETTM ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
ISOISXISTI lMtola3lMTl I I ll
Description
The IRF6612PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGs Gate-to-Source Voltage t20
b @ To = 25°C Continuous Drain Current, l/ss @ 10V S 136
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V © 24 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V (4D 19
IBM Pulsed Drain Current s 190
EAS Single Pulse Avalanche Energy © 37 mJ
IAR Avalanche Current S 19 A
10 _ 6.0
,2 9 ID=24A ii'; 'D=19A
ca 8 1'l 5.0 - -VDS-- HI/ ,,,,t','5
ta 7 g 4.0 (/ti-r'1riiir...i.s.ssts1'''''"
st., 6 T J = 125°C 8
m 5 s 3.0 //
f 4 tf,', . f
Ts,' 3 S,. 2.0 /
'2 2 J=2S'C (,1-l /
f- 1 g 1.0
0 Jo' 0.0 A"
2 3 4 5 6 7 8 9 10 0 10 20 30 40
VGS, Gate -to -Source Voltage (V) As Total Gate Charge (NC)
Fig I. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
C) Click on this section to link to the appropriate technical paper. (E) TC measured with thermocouple mounted to top (Drain) of part.
C) Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T: = 25°C, L = 0.20mH, Rs = 259, IAS = 19A.
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lRF6612PbF International
ISZR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABI/oss/AT, Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C. ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.5 3.3 mn Vas = 10V, Ir, = 24A ©
- 3.4 4.4 VGS = 4.5V, ID = 19A C)
VGS(1h) Gate Threshold Voltage 1.35 1.8 2.25 V VDs = Ves, ID = 25OPA
AVGsuhyATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 24V, VGs = 0V
- - 100 VDS = 24V, Ves = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
gfs Forward Transconductance 96 - - S Vos = 15V, lo = 19A
q, Total Gate Charge - 30 45
0951 Pre-Vth Gate-to-Source Charge - 8.5 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.9 - nC Ves = 4.5V
di Gate-to-Drain Charge - 10 - ID = 19A
ngd, Gate Charge Overdrive - 8.6 - See Fig. 14
st Switch Charge (0952 + 090.) - 13 -
Qoss Output Charge - 18 - nC Vos = 16V, VGS = 0V
ton) Turn-On Delay Time - 15 - VDD = 16V, Vss = 4.5V ©
t, Rise Time - 52 - ID = 19A
tam) Turn-Off Delay Time - 21 - ns Clamped Inductive Load
t, Fall Time - 4.8 - See Fig. 15 & 16
Ciss Input Capacitance - 3970 - Ves = OV
cu, Output Capacitance - 780 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the HM
Iss, Pulsed Source Current - - 190 integral reverse G {3:1
(Body Diode) CO p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 19A, VGS = 0V ©
1,, Reverse Recovery Time - 19 29 ns Tu = 25°C, IF = 19A
Q,, Reverse Recovery Charge - 8.1 12 nC di/dt = 100A/ps © See Fig. 17
Notes:
G) Repetitive rating; pulse width limited by max. junction temperature.
C) Pulse width S 400ps; duty cycle 3 2%.
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