IRF6612TR1 ,HEXFET Power MOSFETapplications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-niques ..
IRF6612TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes.applications, PCB assembly equipment andvapor phase, infra-red or convection soldering techniques. ..
IRF6613 ,HEXFET Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 40 VDSGate-to-Sou ..
IRF6613TR1PBF ,A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 40Drain-to-Source Voltage VDSGate-to-Sou ..
IRF6614 ,DirectFET Power MOSFETapplications, PCB assembly equipment and vapor phase, infra-red orconvection soldering techniques, ..
IRF6617 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques, ..
IS63LV1024L-12B , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12H , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
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IRF6612TR1
HEXFET Power MOSFET
PD - 95842
IRF6612/lRF6612TR1
HEXFET® Power MOSFET
International
TOR Rectifier
VDss RDS(on) max Ctg(typ0
0 Application Specific MOSFETs 30V 3.3mQ@VGS = 10V 30nC
q Ideal for CPU Core DC-DC Converters 4.4mQ@Vss = 4.5V
0 Low Conduction Losses
0 Low Switching Losses
0 Low Profile (<0.7 mm)
. Dual Sided Cooling Compatible 1 E: s 01
q Compatible with existing Surface Mount
Techniques
MX DirectFETw ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
ISQISXISTI IMQl-IMTI I
Description
The IRF6612 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 07 mm profile, The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes, The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switch-
ing losses, The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck convert-
ers including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socket,
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 v
VGs Gate-to-Source Voltage A20
ID @ TC = 25''C Continuous Drain Current, Vss @ 10V 136
ID @ TA = 25°C Continuous Drain Current, I/ss © 10V 24 A
ID @ TA = 70°C Continuous Drain Current, Ws @ 10V 19
IDM Pulsed Drain Current C) 190
PD @TA = 25''C Power Dissipation s 2.8
PD @TA = 70°C Power Dissipation s 1.8 W
PD @Tc = 25''C Power Dissipation 89
Linear Derating Factor 0.022 W/°C
To Operating Junction and -40 to + 150 °c
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient ©© - 45
RM Junction-to-Ambient ©O 12.5 -
RNA Junction-to-Ambient ©© 20 ''CIW
Rm Junction-to-Case (D. 1.4
RMPCB Junction-to-PCB Mounted 1.0 -
Notes C) through are on page 10
1
02/02/04
IRF6612/lRF6612TR1 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V Vss = OV, ID = 250uA
ABVDSSIATJ Breakdown Voltage Temp. Coemcient - 24 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 2.5 3.3 mn Vss = 10V, ID = 24A ©
- 3.4 4.4 Vss = 4.5V, ID = 19A ©
Vegan) Gate Threshold Voltage 1.35 - 2.25 V Vos = Ves, ID = 250pA
AVssith/ATu Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Ves = 0V
- - 100 Vos = 24V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage -- - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 96 - - S Vos = 15V, ID = 19A
Qg Total Gate Charge - 30 45
Qgs1 Pre-Vth Gate-to-Source Charge - 8.5 - Vos = 15V
QgsZ Post-Vth Gate-to-Source Charge - 2.9 - nC Vss = 4.5V
di Gate-to-Drain Charge - 10 - ID = 19A
ngdr Gate Charge Overdrive - 8.6 -
st Switch Charge (0952 + di) - 13 -
Qoss Output Charge - 18 - nC Vos = 16V, N/ss = 0V
tum) Turn-On Delay Time - 15 - VDD = 16V, VGS = 4.5V ©
t, Rise Time - 52 - b = 19A
tum“) Turn-Off Delay Time - 21 - ns Clamped Inductive Load
t, Fall Time - 4.8 -
Ciss Input Capacitance - 3970 - VGS = 0V
Coss Output Capacitance - 780 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 37 mJ
IAR Avalanche Current Ci) - 19 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 24 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 190 integral reverse G
(Body Diode) CD p-n junction diode. s
I/sro Diode Forward Voltage - - 1.0 V TJ = 25''C, Is = 19A, VGS = 0V ©
trr Reverse Recovery Time - 19 29 ns T: = 25°C, IF = 19A
G, Reverse Recovery Charge - 8.1 12 nC di/dt = 100Alps ©
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