IRF6612TR1 ,HEXFET Power MOSFETapplications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-niques ..
IRF6612TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes.applications, PCB assembly equipment andvapor phase, infra-red or convection soldering techniques. ..
IRF6613 ,HEXFET Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 40 VDSGate-to-Sou ..
IRF6613TR1PBF ,A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 40Drain-to-Source Voltage VDSGate-to-Sou ..
IRF6614 ,DirectFET Power MOSFETapplications, PCB assembly equipment and vapor phase, infra-red orconvection soldering techniques, ..
IRF6617 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques, ..
IS63LV1024L-12B , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12H , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12H , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12JL , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12KI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12T , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IRF6612
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 95842E
International IRz6612/lRF6612TR1
dti . . .
TOR lectifier DirectFETTM Power MOSFET
o RoHS compliant containing no lead or bromide Voss RDS(on) max Clg(typ0
0 Application Specific MOSFETs 30V 3.3mQ@Vss = 10V 30nC
q Ideal for CPU Core DC-DC Converters 4.4mQ@Vas = 4.5V
q Low Conduction Losses
q Low Switching Losses
. Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible - tii) s'; I
0 Compatible with Existing Surface Mount a)
Techniques
MX DirectFETTM ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
ISQISXISTI IMQIE'ESIMTI I I I
Description
The IRF6612 combines the latest HEXFET© power MOSFET silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters
that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for
parameters that are critical in synchronous buck converters including RDSW, gate charge and Cdv/dt-induced turn on
immunity to minimize losses in the synchronous FET socket.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 v
Vss Gate-to-Source Voltage :20
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 136
ID @ T, = 25°C Continuous Drain Current, VGS @ 10V 24 A
ID @ T, = 70°C Continuous Drain Current, Vas @ 10V 19
IBM Pulsed Drain Current C) 190
PD @TA = 25°C Power Dissipation s 2.8
PD @TA = 70°C Power Dissipation s 1.8 w
PD @TC = 25°C Power Dissipation 89
Linear Derating Factor 0.022 WPC
TJ Operating Junction and -40 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient (D. - 45
RNA Junction-to-Ambient ©0125 -
ROJA Junction-to-Ambient (90 2O - °C/W
Rom Junction-to-Case (DO _ 1.4
ROJ.PCB Junction-to-PCB Mounted 1.0 -
Notes C) through are on page 10
1
11/17/05
IRF6612/lRF6612TR1
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, k, = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.5 3.3 mn Ves = 10V, ID = 24A ©
- 3.4 4.4 Vss = 4.5V, b = 19A ©
Vesah) Gate Threshold Voltage 1.35 - 2.25 V Vos = Veg, ID = 250pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Ves = 0V
-- -- 100 Vos = 24V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage --- - -100 VGs = -20V
gfs Forward Transconductance 96 -- - S Vos = 15V, ID = 19A
a, Total Gate Charge - 30 45
0951 Pre-Vth Gate-to-Source Charge - 8.5 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.9 - nC Ves = 4.5V
the Gate-to-Drain Charge - 10 - ID = 19A
ngdr Gate Charge Overdrive - 8.6 -
st Switch Charge (0952 + di) - 13 -
Qoss Output Charge - 18 - nC Vos = 16V, Ves = 0V
tum) Turn-On Delay Time _ 15 _ VDD = 16V, Vas = 4.5V ©
t, Rise Time - 52 - ID = 19A
tom Turn-Off Delay Time -- 21 -- ns Clamped Inductive Load
t, Fall Time - 4.8 --
Ciss Input Capacitance --- 3970 - Ves = 0V
Coss Output Capacitance - 780 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 37 mJ
IAR Avalanche Current (D - 19 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 190 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 19A, l/ss = 0V ©
trr Reverse Recovery Time - 19 29 ns TJ = 25°C, IF = 19A
l Reverse Recovery Charge -- 8.1 12 n0 di/dt = 100A/ps ©
2
