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IRF6608
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 94727A
International |RF6608/IRF6608TR1
Tait Rectifier HEXFET© Power MOSFET
0 Application Specific MOSFETs Voss RDs(on) max 09
q Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses 30V 9.0mQ@VGS - 10V 16nC
0 Low Switching Losses 11mQ@Vss = 4.5V
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible
0 Compatible with existing Surface Mount l G r-- S l
Techniques D s
DirectFETm iSOMETRIC
Description
The IRF6608 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 3:12
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 55
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 13 A
lo @ TA = 70°C Continuous Drain Current, I/ss @ 10V 10
IDM Pulsed Drain Current (D 100
PD @TA = 25°C Power DISSIpatIon © 2.1
Po @TA = 70°C Power Dissipation © 1.4 W
PD @Tc = 25°C Power Dissipation 42
Linear Derating Factor 0.017 Wl°C
To Operating Junction and MO to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient G) - 58
RNA Junction-to-Ambient S 12.5 -
RNA Junction-to-Ambient © 20 _ ''CIW
RoJc Junction-to-Case © _ 3.0
RoJ-PCB Junction-to-PCB Mounted 1.0 -
Notes O) through co are on page 10
1
9/12/03
IRF6608/IRF6608TR1 International
TOR Rectifier
Static @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. CoeNcient - 29 - mV/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.0 9.0 mn VGS = 10V, ID = 13A ©
- 8.0 11 VGs=4.5V, ks-- 10A ©
Vesan) Gate Threshold Voltage 1.0 - 3.0 V Vos = N/ss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 30 PA Vos = 24V, VGS = 0V
- - 100 Vos = 24V, VGS = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -100 Vss = -12V
gts Forward Transconductance 28 - - S Vos = 15V, ID = 8.8A
09 Total Gate Charge - 16 24
0951 Pre-Vth Gate-to-Source Charge - 4.6 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC VGS = 4.5V
an Gate-to-Drain Charge - 5.3 - ID = 8.8A
ngdr Gate Charge Overdrive - 4.7 - See Fig. 16
st Switch Charge (Qgs2 + di) - 6.7 -
Qoss Output Charge - 11 - nC Ws = 15V, Ves = 0V
tam.) Turn-On Delay Time - 13 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 12 - ID = 8.8A
tam) Turn-Off Delay Time - 16 - ns Clamped Inductive Load
tr Fall Time - 3.4 -
Cs, Input Capacitance - 2120 - Ves = 0V
Cass Output Capacitance - 440 - pF Ws = 15V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS V 54
IAR Avalanche rrent 8.8
E AR Repetitive Ava
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 13 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - 0.94 1.2 V TJ = 25°C, Is = 8.8A, VGS = 0V ©
tn Reverse Recovery Time - 31 47 ns To = 25°C, IF = 8.8A
er Reverse Recovery Charge - 33 50 nC di/dt = 1OOA/ps ©
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