IRF6602 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipmentand vapor phase, infra-red or convection soldering techniques, ..
IRF6603 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6604 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assemblyequipment and vapor phase, infra-red or convection soldering techniques. ..
IRF6607 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6607TR1 ,Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6608 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
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IRF6602
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
International
TOR Reciiiier
q Application Specific MOSFETs
0 Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses
0 Low Switching Losses
q Low ProNe (
q Dual Sided Cooling Compatible
q Compatible with existing Surface MountTechniques
PD-94363C
z6602/IRF6602TR1
HEXFEToPowerMOSFET
Voss RDS(on) max
20V 13mg2@1/ss = 10V
19mQ@VGS = 4.5V
DirectFETm ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
Description
ISTI lll'El
MTI I I I l
The IRF6602 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high emciency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage t20
ID @ Tc = 25''C Continuous Drain Current, Vss @ 10V 48
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.9 A
IDM Pulsed Drain Current OD 89
Po @TA = 25°C Power Chsspation s 2.3 W
Pro @TA = 70°C Power Dissipation s 1.5
PD @Tc = 25°C Power Dissipation 42
Linear Derating Factor 0.018 W/°C
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Res
ROJ-PCB
stance
Parameter
Junction-to-PCB Mounted
are on page
3/1/04
IRF6602/l RF6602TR1 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, lo = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coemcient - 22 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - IO 13 mn VGS = 10V, ID = 11A ©
- 14 19 V93 = 4.5V, ID = 8.8A ©
VGS(th) Gate Threshold Voltage 1.0 2.0 2.3 V Vos = VGS, ID = 250pA
AVesah) Gate Threshold Voltage CoefMient - -4.4 - mV/°C
- - 100 Vros = 20v, Vss = OV
loss Drain-to-Source Leakage Current - - 20 pA Vros = 16V, VGS = 0V
- - 125 Ws = 16V, Vss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
gfs Forward Transconductance 20 - - S Ws = 10V, ID = 8.8A
q, Total Gate Charge - 12 18
Qgs1 Pre-N/th Gate-to-Source Charge - 3.5 - I/os = 10V
Qgs2 Post-N/th Gate-to-Source Charge - 1.3 - nC VGS = 4.5V
qu Gate-to-Drain Charge - 4.2 - ID = 8.8A
ngdr Gate Charge Overdrive - 3.0 - See Fig. 16
st Switch Charge (Q95; + di) - 5. 5 -
Qoss Output Charge - 19 - nC Ws = 16V, Vss = OV
Re Gate Resistance - 2.8 4.2 Q
td(on) Turn-On Delay Time - 33 - VDD = 15V, VGS = 4.5V ©
tr Rise Time - 6.0 - ID = 8.8A
tum) Turn-Off Delay Time - 14 - ns Clamped Inductive Load
t, Fall Time - 12 -
Ciss Input Capacitance - 1420 - VGS = 0V
Cass Output Capacitance - 960 - pF Ws = 10V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS an rgy 97
IAR u 8.8
EAR va 4.2
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 48 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse G
(Body Diode) CO p-n junction diode. S
Vso Diode FonNard Voltage - 0.83 1.2 V TJ = 25°C, ls = 8.8A, VGS = 0V ©
tn Reverse Recovery Time - 42 62 ns TJ = 25°C, IF = 8.8A
er Reverse Recovery Charge - 51 77 nC di/dt = 100Alps ©
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