IC Phoenix
 
Home ›  II25 > IRF650B,200V N-Channel MOSFET
IRF650B Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF650BFAIRCHILN/a620avai200V N-Channel MOSFET


IRF650B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 VDS(on) ..
IRF654B ,250V N-Channel MOSFETIRF654B/IRFS654BNovember 2001IRF654B/IRFS654B250V N-Channel MOSFET
IRF6601 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 20 VV Gate-to- ..
IRF6602 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipmentand vapor phase, infra-red or convection soldering techniques, ..
IRF6603 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6604 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assemblyequipment and vapor phase, infra-red or convection soldering techniques. ..
IS63LV1024-15J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15JI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15KI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15TI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT


IRF650B
200V N-Channel MOSFET
IRF650B November 2001 IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 75 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF650B IRFS650B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 28 28 * A D C - Continuous (T = 100°C) 17.7 17.7 * A C I (Note 1) Drain Current - Pulsed 112 112 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 600 mJ AS I Avalanche Current (Note 1) 28 A AR E (Note 1) Repetitive Avalanche Energy 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 156 50 W D C - Derate above 25°C 1.25 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF650B IRFS650B Units R Thermal Resistance, Junction-to-Case Max. 0.8 2.51 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED