IRF640NSTRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF640NSTRRPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 95046AIRF640NPbFIRF640NSPbF Advanced Process Technology IRF640NLPbF Dynamic dv/dt Rating®HEX ..
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IRF640STR ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF640NSTRLPBF-IRF640NSTRRPBF
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 95046A
International
. . lRF640NPbF
TOR. Rectifier lRF640NSPbF
a Advanced Process Technology IRF640NLPbF
q Dynamic du/dt Rating HEXFET® Power MOSFET
q 175°C Operating Temperature
q Fast Switching D
q Fully Avalanche Rated VDSS = 200V
0 Ease of Paralleling
q Simple Drive Requirements - A RDs(on) = 0.159
'l, btg,'/egte G
escrl Ion
Fifth GeEeration HEXFETO Power MOSFETs from s ID = 18A
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation levels Pr
to approximately 50 watts. The low thermal resistance and " 'itiiit)
low package cost of the TO-220 contribute to its wide '1t8'fc, ,
acceptance throughout the industry. _ Fs,
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- TO-220AB D2Pak TO-262
resistance in any existing surface mount package. The IRF640NPbF IRF640NSPbF IRF640NLPbF
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss © 10V 18
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 13 A
G, Pulsed Drain Current C) 72
PD @TC = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
l/ss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 247 mJ
IAR Avalanche Current© 18 A
EAR Repetitive Avalanche Energy© 15 mJ
dv/dt Peak Diode Recovery dv/dt © 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© IO Ibf-in (1 .1N-m)
1
07/23/1 0
IRF640N/S/LPbF International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.25 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.15 n I/ss = 10V, ID = 11A ©
Vsam) Gate Threshold Voltage 2.0 - 4.0 V VDs = Vas, ID = 250PA
gfs Forward Transconductance 6.8 - - S VDs = 50V, ID = 11A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, Vas = 0V
- - 250 Vos = 160V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
th Total Gate Charge - - 67 lo = 11A
095 Gate-to-Source Charge - - 11 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 33 Vas = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time - 10 - VDD = 100V
tr Rise Time - 19 - ID =11A
td(ott) Turn-Off Delay Time - 23 - ns Rs = 2.59
tf Fall Time - 5.5 - RD = 9.09, See Fig. 10 ©
Lo Internal Drain Inductance -- 4.5 - Between Cr") D
nH 6mm (0.25m.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1160 - l/ss = 0V
Coss Output Capacitance - 185 - Vos = 25V
Crss Reverse Transfer Capacitance - 53 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 18 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse (3
(Body Diode)© - - 72 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 11A, Vas = 0V ©
trr Reverse Recovery Time - 167 251 ns Tu = 25°C, IF = 11A
Qrr Reverse Recovery Charge - 929 1394 nC di/dt = 100A/ps G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Thermal Resistance
Parameter Typ. Max. Units
Rax; Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface 69 0.50 - °C/W
RQJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
2
