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IRF634SIRN/a4800avai250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF634STRLIRN/a800avai250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF634STRRIRN/a662avai250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF634S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and can dissipate up to 2.0W in a t ..
IRF634STRL ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and can dissipate up to 2.0W in a t ..
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IRF634S-IRF634STRL-IRF634STRR
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
interjyatii9!yig
142R Rectifier
PD-9.1005
IRF634S
HEXFET® Power MOSFET
q Surface Mount
0 Available in Tape & Reel D
o Dynamic dv/dt Rating
o Repetitive Avalanche Rated
tt Fast Switching L, A
0 Ease of Paralleling
0 Simple Drive Requirements
VDSS = 250V
RDS(on) = 0.459
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-22O
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, I/ss @ 10 V 8.1
[D @ To = 100°C Continuous Drain Current, I/ss @ 10 v 5.1 A
[W Pulsed Drain Current C) 32
Po @ To = 25°C Power Dissipation 74 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 0.59 WPC
Linear Derating Factor (PCB Mount)" 0.025
N/ss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 300 mJ
IAR Avalanche Current (D 8.1 A
EAR Repetitive Avalanche Energy Ci) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To, TSTG Junction and Storage Temperature Range -55 to +150 ' °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case _ - - 1.7
RNA Junction-to-Ambient (PCB mount)" - - 40 °C/W
Ram Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or G-10 Material),
For recommended footprint and soldering techniques refer to application note #AN-994.
iRF634s TOR
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGs=0V, ID: 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.37 - VPC Reference to 25°C, ID: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.45 n Ves=1OV, 10:5.1A ©
VSS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250pA
gis Forward Transconductance 1.6 - - S VDs=50V, |D=5.1A ©
. - - 25 VDs=250V, l/ss-HN
loss Drain-to-Source Leakage Current - - 250 WA Vos=200V, VGs=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage - -- -100 Vss=-20V
th Total Gate Charge - - 41 lo=5.6A
ths Gate-to-Source Charge - - 6.5 nC 1/rs=200V
di Gate-to-Drain ("Miller") Charge - - 22 Var---10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 9.6 - VDD=125V
tr Rise Time - 21 - n s ID=5.6A
tam) Turn-Off Delay Time - 42 - Re=12§2
tf Fall Time - 19 - Ro=22§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 29:21: ste. ') D
nH from package GAE )
Ls Internal Source Inductance - 7.5 - Ind center bf
die contact s
Ciss Input Capacitance - 770 - Vss=0V
Goss Output Capacitance - 190 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 52 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 8 1 MOSFET symbol D
(Body Diode) . A showing the L,-i-c
ISM Pulsed Source Current - - 32 integral rgver§e G tL
(Body Diode) (i) p-n junction diode, s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=8.1A, VGs=OV ©
trr Reverse Recovery Time - 220 440 ns TJ=25°C, Ip=5.6A
er Reverse Recovery Charge - 1.2 2.4 “C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic lurn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
OD Repetitive rating; pulse width limited by G) 150:8.1A, di/dts120A/ps, VDDSV(BR)Dss,
max. junction temperature (See Figure 11) TJS150°C
© Voo=50V, starting TJ=25°C, L=7.3mH © Pulse width s 300 ps; duty cycle 32%.
RG=25§2, IAS---8.1A (See Figure 12)
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