IRF634PBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET<) Power MOSFET
. Dynamic dv/dt Rating
Repetitive Ava ..
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IRF634PBF
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
rItist',tatiipt,tall
149R Rectifier
. PD-9.47GC
IRF634
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
o Ease of Paralleling
tlt Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
lrr=8AA
VDSS = 250V
RDS(on) = 0.459
on-resistance and cost-effectiveness.
The T0-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
Parameter Max. Units
ID o To = 25°C Continuous Drain Current, Vas @ 10 V 8.1
ID © Tc = 100°C Continuous Drain Current, Vas © 10 V 5.1 A
IN Pulsed Drain Current C) 32
Po © Tc = 25°C Power Dissipation 74 W
Linear Derating Factor 0.59 WPC
Vas Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 300 md
IAR Avalanche Current Ci) 8.1 A
EAR Repetitive Avalanche Energy (i) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
Tu Operating Junction and -55 to +150
Tsrs Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nam)
Thermal Resistance
Parameter Min. _ Typ. Max. Units
Ran 'Junction-to-Case _ - _ T"-" 1.7
Recs Case-to-Sink, Flat, Greased Surface T - 0.50 - °C/W
Rem Junction-to-Ambient _ - - 62
IRF634
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V Ves=0V, ID: 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.37 - VPC Reference to 25°C, Io= 1mA
Roam.) Static Drain-to-Source On-Resistance - - 0.45 ft Ves=10V, b=5AA ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vns--Vss, Io: 2500A
gas Forward Transconductance 1.6 - - S Vos=50V, |D=5.1A ©
loss Drain-to-Source Leakage Current - - 25 “AI VDs--250V, Vss=OV
- - 250 Vos=200V, I/ss-UN, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO Ves=-2OV
Qg Total Gate Charge - - 41 lior-5.6A
Qgs Gate-to-Source Charge - - 6.5 no Vos=200V
di Gate-to-Drain ("Miller") Charge - - 22 1/as=10V See Fig. 6 and 13 co
tdm Turn-On Delay Time - 9.6 - Voo=125V
tr Rise Time - 21 - ns 10:5.6A
tum) Turn-Off Delay Time - 42 - RG=12Q
tt Fall Time - 19 - RD=22§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - , 'iitriit), it/nd. , D
nH from package GE
Ls Internal Source Inductance -.._ 7.5 - Ind center 6f E
die contact s
Ciss Input Capacitance - 770 - VGs=0V
Coss Output Capacitance - 190 - pF Vos=25V
Crss Reverse Transfer Capacitance - 52 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 8 1 MOSFET symbol D
(Body Diode) . A showing the Lt
ISM Pulsed Source Current - - 32 integral reverse G (tLl
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, 15:8.1A, l/cs-HN ©
trr Reverse Recovery Time - 220 440 ns TJ=25°C, IF=5.6A
er Reverse Recovery Charge - 1.2 2.4 PC dildt=100A/ps a)
ton Forward Turn-Chi Time Intrinsic turn-on time is negiegible (turn-on is dominated by Ls+Lo)
Notes:
(D Repetitive rating; pulse width limited by
Tax. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=7.3mH
RG=25£2, |As=8.1A (See Figure 12)
© [3058.1A, di/dt<-120A/ws, VDDSV(BH)Dss,
TJS150°C
© Pulse width 5 300 us; duty cycle s2%.
