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IRF630NSTRLPBFIRN/a5600avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF630NSTRLPBFVISHAYN/a11174avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF630NSTRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF630NSTRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 95047AIRF630NPbFIRF630NSPbF Advanced Process TechnologyIRF630NLPbF Dynamic dv/dt Rating®HEXF ..
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IRF630NSTRR ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance andl ..
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IRF630NSTRLPBF
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR. Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
q Lead-Free
Description
Fifth Generation HEXFET© Power MOSFETs from
International Rectifierutilize advanced processingtechniques
to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
PD - 95047A
IF1F630NPbF
lRF630NSPbF
IRF630NLPbF
HEXFET® Power MOSFET
VDSS = 200V
. RDSM = 0.309
ID = 9.3A
The TO-220 package is universally preferred for all
commercial-industrial-lic/tsat-eros/tion/els " Pr ttGi; Igiitt
to approximately 50 watts. The low thermal resistance and 'itiiit) 3 rroiij..iji, Rlsrt)
low package cost of the TO-220 contribute to its wide N5irci' "rs, "ci6i)l'i-"; sl."' \
acceptance throughout the industry. "tti' N, ',
The D2Pak is a surface mount power package capable of t '
accommodating die sizes up to HEX-4. It provides the
highest power capat.oili.ty andf the lowest poisible Te:- TO-220AB D2Pak TO-262
resistance In an existin sur ace moun ac a e. e
D2Pak is suitable¥or high cment C',eoi'2l'2s'l,ad'tesee' of its IRF630NPbF IRF630NSPbF IRF630NLPbF
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss © 10V 9.3
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 6.5 A
G, Pulsed Drain Current C) 37
PD @TC = 25°C Power Dissipation 82 W
Linear Derating Factor 0.5 W/°C
l/ss Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy© 94 mJ
IAR Avalanche Current© 9.3 A
EAR Repetitive Avalanche Energy© 8.2 mJ
dv/dt Peak Diode Recovery dv/dt © 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© IO Ibf-in (1 .1N-m)


07/23/1 0
IRF630N/S/LPbF International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.30 n I/ss = 10V, ID = 5.4A ©
Vsam) Gate Threshold Voltage 2.0 - 4.0 V VDs = Vas, ID = 250PA
gfs Forward Transconductance 4.9 - - S VDs = 50V, ID = 5.4A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, Vas = 0V
- - 250 Vos = 160V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
th Total Gate Charge - - 35 lo = 5.4A
Qgs Gate-to-Source Charge - - 6.5 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 17 Vas = 10V ©
td(on) Turn-On Delay Time - 7.9 - VDD = 100V
tr Rise Time - 14 - ID = 5.4A
td(ott) Turn-Off Delay Time - 27 - ns Rs = 139
tf Fall Time - 15 - RD = 189 ©
. Between lead, D
Lo Internal Drain Inductance -- 4.5 - .
nH 6mm (0.25m.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 575 - l/ss = 0V
Coss Output Capacitance - 89 - Vos = 25V
Crss Reverse Transfer Capacitance - 25 - pF f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 9.3 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse
(Body Diode)© - - 37 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 5.4A, Vas = 0V ©
trr Reverse Recovery Time - 117 176 ns Tu = 25°C, IF = 5.4A
Qrr Reverse Recovery Charge - 542 813 nC di/dt = 100A/ps G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Thermal Resistance
Parameter Typ. Max. Units
Rax; Junction-to-Case - 1 .83
Recs Case-to-Sink, Flat, Greased Surface 69 0.50 - °C/W
RQJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
2

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