| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IRF6053 |
TI|Texas Instruments |
N/a |
22 |
 |
|
IRF610 ,3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFETInternational
ISBR
Rectifier
PD-9.326l
IRF610
HEXFET® Power MOSFET
. Dynamic dv/d ..
IRF610. ,3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 3.3A, 200VThis N-Channel enhancement mode silicon gate power field = 1.500Ω•rDS(ON) ..
IRF6100 ,-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET packageapplications. These benefits, combined withthe ruggedized device design , that International Rectif ..
IRF6100 ,-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET packagePD - 93930FIRF6100®HEXFET Power MOSFET Ultra Low R per Footprint AreaDS(on)V R max IDSS DS(on) D ..
IRF6100PBF ,-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET packageapplications. These benefits, combined withthe ruggedized device design , that International Rectif ..
IS62LV1288LL-55HI , 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV1288LL-55T , 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV1288LL-70HI , 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
