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IRF5852TRPBFIRN/a48000avai20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package


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IRF5852TRPBF
20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package
International
TOR Rectifier
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefitprovidesthe designerwith an extremely efficient
device for use in battery and load management
PD - 95261A
llRF5852PbF
HEXFET© Power MOSFET
RDS(on) max (f2) ID
0.090@VGs = 4.5V 2.7A
0.120@VGS =2.5V 2.2A
S212 5 SI
'IE-ries, e m
applications. TSOP-6 Top View
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDs(on)
reduction enables an increase in current-handling
capability.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID © TA = 25°C Continuous Drain Current, I/ss © 4.5V 2.7
ID @ TA-- 70°C Continuous Drain Current, Vai; @ 4.5V 2.2 A
IDM Pulsed Drain Current (D 11
PD @TA = 25°C Power Dissipation © 0.96 W
PD @TA = 70°C Power Dissipation© 0.62
Linear Derating Factor 7.7 mW/°C
l/ss Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 130 °CNV
1

04/20/1 O
IRF5852PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 20 - - V l/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.016 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0090 Q Vss = 4.5V, ID = 2.7A ©
- - 0.120 Vss = 2.5V, ID = 2.2A ©
Vegan) Gate Threshold Voltage 0.60 - 1.25 V VDs = I/es, ID = 250pA
gfs Forward Transconductance 5.2 - - S Vos = 10V, ID = 2.7A
. - - 1.0 Vos = 16V, VGS = ov
I Drain-to-Source Leaka e Current
DSS g - - 25 PA Vos = 16V, l/tas = OV, To = 70°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 12V
GSS Gate-to-Source Reverse Leakage - - -100 Vss = -12V
% Total Gate Charge - 4.0 6.0 lo = 2.7A
Qgs Gate-to-Source Charge - 0.95 - nC 1hos = 16V
di Gate-to-Drain ("Miller") Charge - 0.88 - VGS = 4.5V ©
td(on) Turn-On Delay Time - 6.6 - VDD = 10V ©
t, Rise Time - 1.2 - ns ID =1.0A
td(off) Turn-Off Delay Time - 15 - Rs = 6.29
t, Fall Time - 2.4 - l/ss = 4.5V
Ciss Input Capacitance - 400 - l/ss = 0V
Coss Output Capacitance - 48 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 0 96 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 1 1 integral reverse 5
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 0.96A, Vas = 0V C)
trr Reverse Recovery Time - 25 38 ns TI, = 25°C, IF = 0.96A
A, Reverse Recovery Charge - 6.5 9.8 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle 3 2%.

Surface mounted on FR-4 board, ts: 5sec.

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