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IRF5810-IRF5810TR
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
International
:raRlectifier
0 Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
PD -94198A
IRF5810
HEXFET® Power MOSFET
VDss RDS(on) max (m9) ID
-2ov 90@VGS = -4.51/ -2.9A
135@VGS = -2.5V -2.3A
(Y D: 6 D1
G2 J E] Dfl
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and TSOP-6
where maximum functionality is required. l/Wh two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -2.9
ID @ TA-- 70°C Continuous Drain Current, I/ss @ -4.5N/ -22 A
IDM Pulsed Drain Current Ci) -11
Po @TA = 25°C Power Dissipation © 0.96 W
Pro @TA = 70°C Power Dissipation © 0.62
Linear Derating Factor 0.008 mW/°C
VGS Gate-to-Source Voltage i 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 130 'C/W
1
1/13/03
IRF5810
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 60 90 mn Was = -4.5V, ID = -2.9 ©
- 87 135 VGS = -2.5V, ID = -22A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 5.4 - - S Vos = -10V, ID = -2.9A
Kass Drain-to-Source Leakage Current - - -1.0 pA Vros = -16V, VGS = 0V 0
- - -25 Ws = -16V, Vss = 0V, T: = 70 C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 6.4 9.6 ID = -2.9A
Qgs Gate-to-Source Charge - 1.2 1.8 nC Vros = -10V
di Gate-to-Drain ("Miller") Charge - 1.7 2.6 VGS = -4.5V
Kon) Turn-On Delay Time - 8.2 - VOD = -10V ©
tr Rise Time - 14 - ns ID = -1.0A
tam) Turn-Off Delay Time - 62 - Rs = 6.09
tf Fall Time - 53 - VGs = -4.5V
Ciss Input Capacitance - 650 - VGs = 0V
COSS Output Capacitance - 110 - pF Vos = -16V
Crss Reverse Transfer Capacitance - 86 - f = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 A showing the
ISM Pulsed Source Current - - -1 1 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, N/ss = 0V ©
tn Reverse Recovery Time - 110 170 ns To = 25°C, IF = -1.0A
Qrr Reverse Recovery Charge - 130 200 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle f 2%.
(3) Surface mounted on 1 in square Cu board
