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IRF5805TRIORN/a40avai-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package


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IRF5805TR
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Reciiiier
PD -94029A
IRF5805
HEXFET© Power MOSFET
o Ultra Low On-Resistance VDss RDS(on) max In
0 P-Channel MOSFET
. Surface Mount -30V O.098@VGS - -10V -3.8A
0 Available in Tape & Reel 0.165@Vss = -4.51/ -3.0A
q Low Gate Charge
Description
These P-channel MOSFETsfrom International Rectiher D [1 ' ' 6 D
utilize advanced processing techniques to achieve the J r,
extremely low on-resistance per silicon area. This sz : 5m D
benefit providesthe designerwith an extremely efficient l
device for use in battery and load management
applications. G E 3 4 S
The TSOP-6 package with its customized leadframe Top View TSOP-6
produces a HEXFET6 power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's uniquethermal design and Roam)
reduction enables a current-handiing increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, Ves @ -10V -3.8
In @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A
IDM Pulsed Drain Current0) -15
Pro @TA = 25°C Maximum Power Dissipation© 2 W
PD @TA = 70°C Maximum Power Dissipation© 1.28 W
Linear Derating Factor 0.02 Wl°C
VGs Gate-to-Source Voltage 1 20 V
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient 62.5 ''CIVV
1

1/13/03
IRF5805 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.02 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - - 0.098 Q VGS = -10V, ID = -3.8A ©
- - 0.165 VGS = -4.5V, ID = -3.OA ©
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 3.5 - - S Vos = -10V, ID = -3.8A
loss Drain-to-Source Leakage Current - - -15 PA N/ns = -24V, VGS = 0V (2
- - -25 V93 = -24V, Vss = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 11 17 ID = -3.8A
Qgs Gate-to-Source Charge - 2.3 - nC Vos = -151/
di Gate-to-Drain ("Miller") Charge - 1.5 - VGS = -10V
tdon) Turn-On Delay Time - 11 17 Va, = -15V, VGS = -10V
tr Rise Time - 14 21 ns ID = -1.0A
td(off) Turn-Off Delay Time - 90 135 Rs = 6.09
tf Fall Time - 49 74 RD = 159 C)
Ciss Input Capacitance - 511 - VGs = 0V
Coss Output Capacitance - 79 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current - - -15 A integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGs = 0V ©
trr Reverse Recovery Time - 19 29 ns To = 25''C, IF = -2.0A
Qrr Reverse Recovery Charge - 16 24 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 Surface mounted on 1 in square Cu board, t s 10sec.
max. junction temperature.
© Pulse width I 400ps; duty cycle 3 2%.
2

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