IRF5803D2TRPBF ,-40V FETKYapplications.The SO-8 has been modified through a customizedSO-8leadframe for enhanced thermal char ..
IRF5803D2TRPBF ,-40V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF5803D2TRPBF
-40V FETKY
International PD-95160A
TOR Rectifier IRF5803D2PbF
. Co-packaged HEXFET© Power FETKY MOSFET & Schottky Diode
MOSFET and Schottky Diode 1 a
. Ideal For Buck Regulator Applications A D: W 33" VDSS = -40V
0 P-Channel HEXFET© A E2 1:3: K
0 Low VF Schottky Rectifier L 6 R = 112mQ
. SO-8 Footprint S D: @333 D DS(0n)
G mr-'- 5113 D
q Lead-Free Schottky Vf= 0.51v
Description Top View
The FETKYTM family of Co-packaged HEXFETs and
Schottkydiodes offerthe designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International RectifIer's low forward
drop Schottky rectiflers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A
ID @ TA = 70°C Continuous Drain Current, Vss @ -10V -2.7
IDM Pulsed Drain Currentci) -27
Po @TA = 25°C PowerDissipation 2.0 W
Pro @TA = 70°C PowerDissipation 1.3
Linear Derating Factor 16 mW/°C
Ves Gate-to-Source Voltage 1 20 V
Tv, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead, MOSFET - 20
ReJA Junction-to-Ambient co, MOSFET - 62.5 ''CIW
ReJA Junction-to-Ambient ©, SCHOTTKY - 62.5
Notes:
co Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
© Pulse width S 400ps - duty cycle S 2%
© Surface mounted on 1 inch square copper board, ts 10sec.
1
10/7/04
IRF5803D2PbF
International
Electrical Characteristics @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage MO - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - AJ.03 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - - 112 mf2 VGS = -10V, ID = -3MA co
- - 190 VGS = -4.5V, ID = -2.7A ©
Vegan) Gate Threshold Voltage -1.0 - -3.0 V Vos = VGs, ID = -250pA
gis Forward Transconductance 4.0 - - S Vos = -10V, ID = -3.4A
loss Drain-to-Source Leakage Current _- _- :2 p A V: ; 2:1 1:: _= "g, T: = 7 (Y' C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg TotalGate Charge - 25 37 ID = -3.4A
Q95 Gate-to-Source Charge - 4.5 6.8 M Vos = -20V
di Gate-to-Drain("Miller")Charge - 3.5 5.3 VGs = -10V, See Fig. 6 & 14 ©
tdwn) Turn-On Delay Time - 43 65 VDD = -20V
tr Rise Time - 550 825 ns ID = -1.0A
td(off) Turn-Off Delay Time - 88 130 Rs = 6.09
tr Fall Time - 50 75 V68 = -1OV, ©
Ciss InputCapacitance - 1110 - VGS = 0V
Coss OutputCapacitance - 93 - pF Vos = -25V
Crss ReverseTransferCapacitance - 73 - f = 100kHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -2.0
ISM Pulsed Source Current (Body Diode) - - -27 A
VSD Body Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 27 40 ns To = 25°C, IF = -2.0A
l Reverse RecoveryCharge - 34 50 I di/dt = 100Alps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 3.0 A 50% Duty Cycle. Rectangular Waveform, TA =30°C
See Fig.21
ISM Max. peak one cycle Non-repetitive 340 Sus sine or 3ps Rect. pulse Following any rated
Surge current 70 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward Voltage Drop 0.51 If = 5.0A, Tj = 25°C
0.63 V If = 10A, T] = 25°C
0.44 If = 5.0A, Tj = 125°C
0.59 If: 10A, T] = 125°C
Vrrm Max. Working Peak Reverse Voltage 40 V
Irm Max. Reverse Leakage Current 3.0 mA Vr = 40V Tj = 25°C
37 T] = 125°C
Ct Max. Junction Capacitance 405 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2
