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IRF5800-IRF5800TR
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 9385OA
International
TOR Rectifier IRF5800
HEXFET© Power MOSFET
o Ultra Low On-Resistance 1
o P-Channel MOSFET D ' '6 D -
q Surface Mount " H L VDSS - -30V
. Available in Tape & Reel DUE I' I D
q Low Gate Charge 3 4
GE s RDS(on) = 0.0859
Top View
Description
These P-channel MOSFETs from International Rectiher
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermaldesign and RDs(on) reduction
enables a current-handling increase of nearly 300% TSOP-6
compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -30 V
ID @ TA = 25''C Continuous Drain Current, Vss @ -4.5V -4.0
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.51/ -3.2 A
IDM Pulsed Drain Current (D -32
PD @TA = 25''C Power Dissipation 2.0 W
Pro @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy© 20.6 mJ
VGS Gate-to-Source Voltage 1 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 62.5 °C/W
1
01/13/03
IRF5800 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250pA
Avangss/ATJ Breakdown Voltage Temp. Coemcient - 0.02 - V/°C Reference to 25''C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0085 Q VGS = -10V, ID = -4.0A ©
- - 0.150 VGs = -4.5V, ID = -3.0A co
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250PA
9ts Forward Transconductance 3.5 - - S Vos = -10V, ID = -4.0A
loss Drain-to-Source Leakage Current _- _- J2): pA V: , Cg,' V: , 3:], To = 70''C
lsss Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg Total Gate Charge - 11.4 17 ID = -4.0A
Qgs Gate-to-Source Charge - 2.3 - nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 2.2 - VGS = -10V ©
td(on) Turn-On Delay Time - 11.4 17 VDD = -15V, VGS = -10V
tr Rise Time - 11 17 ns lo = -1.0A
tdmff) Turn-Off Delay Time - 24 36 Rs = 6.09
If Fall Time - 14 20 RD = 159, ©
Ciss Input Capacitance - 535 - Vss = 0V
Cass Output Capacitance - 94 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 68 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -32 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, IS = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 19 28 ns To = 25°C, IF = -2.0A
Q,, Reverse Recovery Charge - 16 24 nC di/dt = -100Alps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts: Ssec.
max. junction temperature. .
© Starting TJ = 25°C, L = 2.5mH
© Pulse width f 300ps; duty cycle f 2%. Rs = 259, lAs = -4.0A. (See Fig 10 )
2
