IRF540FI Fast Delivery |IC PHOENIX CO.,LIMITED

IRF540FI ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitIRF530 IRF530FIV Drain-source Voltage (V =0) 100 ..
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IRF540FI
N
IRF540
IRF540FI- CHANNEL100V- 00.50Ω- 30A- TO-220/TO-220FI
POWER MOSFET TYPICAL RDS(on)= 0.050Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEEDSWITCHING SOLENOID AND RELAY DRIVERS DC-DC& DC-AC CONVERTER AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
INTERNAL SCHEMATIC DIAGRAM
April 1998
TO-220 TO-220FI232
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF530 IRF530FI
VDS Drain-source Voltage (VGS =0) 100 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 100 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C30 17 A Drain Current (continuous)atTc =100o C21 12 A
IDM(•) Drain Current (pulsed) 120 120 A
Ptot Total DissipationatTc =25o C150 45 W
Derating Factor 1 0.3 W/oC
Viso Insulation Withstand Voltage (DC) - 2000 V
Tstg Storage Temperature -65to 175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse width limitedby safe operatingarea (1)ISD ≤30 Α, di/dt ≤ 200A/μs,VDD≤ V(BR)DSS,Tj≤ TJMAX
TYPE VDSS RDS(on) ID
IRF540
IRF540FI
100V
100V
<0.077Ω
<0.077ΩAA
1/6
THERMAL DATA
TO-220 TO220-FI
Rthj-case Thermal Resistance Junction-case Max 1 3.33 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =25V)
200 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage
VDS =VGS ID =250 μA 2 34V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID=15A 0.05 0.077 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =15A 10 20 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS=0 2600
IRF540/IRF540FI
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =50V ID =15A =4.7 Ω VGS =10V
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80V ID =30A VGS =10V 80
110 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =80V ID =30A =4.7 Ω VGS =10V
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =50A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =30A di/dt= 100 A/μs
VDD =30V Tj =150oC
(∗) Pulsed: Pulse duration=300μs, duty cycle1.5%
(•) Pulse widthlimitedby safeoperating area
IRF540/IRF540FI
3/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 1.27 0.050 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.067 1.14 1.70 0.044 0.067 4.95 5.15 0.194 0.203 2.4 2.7 0.094 0.106 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
Dia.
TO-220 MECHANICAL DATA
P011C
IRF540/IRF540FI
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.4 0.7 0.015 0.027 0.75 1 0.030 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 0.630 28.6 30.6 1.126 1.204 9.8 10.6 0.385 0.417 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 3 3.2 0.118 0.126 G3
ISOWATT220 MECHANICAL DATA
P011G
IRF540/IRF540FI
5/6
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SGS-THOMSON Microelectronicsproductsarenot authorizedforuseas criticalcomponentsinlife support devicesor systems without express
written approvalof SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics- Printedin Italy-All Rights Reserved
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IRF540/IRF540FI
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Partno	Mfg	Dc	Qty	Available	Descript
IRF540FI	ST	N/a	50	avai	N