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Absolute Maximum Ratings
Param eter Max. Units
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IRF520STRR ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
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IRF520VL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplicationsSDescription®Advanced HEXFET Power MOSFETs from International Rectifierutilize advanced ..
IRF520VS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF520NS-IRF520NSTRR
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
PD -9134OA
IRF520NS/L
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
HEXFET© Power MOSFET
VDSS = 100V
A RDS(on) = 0.209
ID = 9.7A
The through-hole version (IRF520NL) is available for low-prone applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V© 9.7
ID @ Tc = 100°C Continuous Drain Current, VGs @ ION/O) 6.8 A
los, Pulsed Drain Current (MD 38
PD @TA = 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy©© 91 mJ
IAR Avalanche Current© 5.7 A
EAR Repetitive Avalanche Energy© 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (sC)(9 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.1 0
RNA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 CM,
5/13/98
IRF520NS/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V I/cs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient -.r.-._ 0.11 -..-..- Vl°C Reference to 25''C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.20 n VGS = 10V, ID = 5.7A Cr)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250PA
gfs Forward Transconductance 2.7 - - S Vros = 25V, ID = 5.7AS
loss Drain-to-Source Leakage Current - - 25 pA VDS = 100V, VGS = 0V
- - 250 VDs = 80V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 25 lo = 5.7A
Qgs Gate-to-Source Charge - - 4.8 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 11 VGS = 10V, See Fig. 6 and 13 C96)
tam) Turn-On Delay Time - 4.5 - VDD = 50V
tr Rise Time - 23 - ID = 5.7A
tmm Turn-Off Delay Time - 32 - ns Rs = 22n
tf Fall Time - 23 - Ro = 8.69, See Fig. 10 (96)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 330 - VGS = 0V
C055 Output Capacitance - 92 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 9.7 showing the
ISM Pulsed Source Current - - 38 A integral reverse G
(Body Diode) OS p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 5.7A, l/ss = 0V co
trr Reverse Recovery Time - 99 150 ns T: = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge - 390 580 nC di/dt = 100Alps 3)6)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See Fig. 11 )
© VDD = 25V, starting T J = 25°C, L = 4.7mH
Rs = 259, IAS-- 5.7A. (See Figure 12)
© ISD S 5.7A, di/dt S 240/Ups, VDD S V(BR)DSS;
Tus175''C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
© Pulse width 3 300ps; duty cycle f 2%.
S Uses IRF520N data and test conditions
