IRF520NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationsWuan-eDem.
Absolute Maximum Ratings
Param eter Max. Units
ID tp To = 25''C Conti ..
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IRF520NSTRLPBF-IRF520NSTRRPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD- 95749
IRF520NSPbF
International
TOR Rectifier
. Advanced Process Technology I R F 52 O N L P b F
. Surface Mount (IRF520NS)
o Low-profile through-hole (IRF520NL) D -
. 175°C Operating Temperature VDSS - 100V
. Fast Switching G Roam) = 0.20:2
. Fully Avalanche Rated ID = 9.7A
. Lead-Free s
Description
Fifth Generation HEXFETS from International Rectifier utlhze advanced
processing techniques to achieve extremely low on-resistance per sullcon area
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designerwith an extremely ethcient and reliable device for use In a wide variety ,. _
of applications " "-
The DZPak is a surface mount power package capable of accommodating die
sizes up to HEX-4 It provides the highest power capability and the lowest F :" ,
possible on-resistance In any existmg surface mount package. The DZPak ls
suitable for high current applications because of Its low Internal connection
reSIstance and can desmpate up to 2 ow m a typlcal surface mount application
The through-hole version (|RF520NL) is available for ltaw-profile applications
Absolute Maximum Ratings
Param eter Max. Units
b C) fc T 25T) Continuous Drain Current, V05 (l) 1(h/S 9.7
b tt TC = 100°C Continuous Drain Current. Ves (t 1(h/S 8.8 A
bu Pulsed Drain Current COS 38
Po (PTA = 25°C Power Dissipation 3.8 W
PD (tfc T 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 WI°C
Vss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy®® 91 ml
IAR Avalanche Current]) 5.7 A
EAR Repetitive Avalanche Energy® 4.8 ml
dv/dt Peak Diode Recovery dv/dt " 5.0 V/ns
T: Operating Junction and -55 to+ 175
Tm Storage Temperature Range T
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R919 JtmctiGFttyCase - 3.1 o
Roy Junction-toAmbienH PCB Mamledgtea)y-state)" - M) CM/
1
8/23/04
IRF520NS/LPbF International
TOR Rectifier
Electrical Characteristics iii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DS§3 Drain-to-Source Breakdown Voltage 100 - - V Veg = OV, ID = 250pA
AVGRDSSIATJ Breakdown Voltage Temp. Coemcient - 0.11 - l/fC Reference to 25''C, lo = 1mAS
RDSW) Static Drain-to-Source On-Resistance - - 0.20 Q Vos = 10V, b = 5.7A G)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = Veg, ID = 250PA
grs Forward Transconductance 2.7 - - S Vos = 25V, ID = 5.7A©
bss Drain-toSource Leakage Current - - 25 PA Vros = 100V, Vss = 0V
- - 250 Vos = 80V, Veg = OV, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 25 ID = 5.7A
Qgs Gate-to-Source Ch arge - - 4.8 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 11 I/ss = 10V, See Fig. 6 and 13 COG)
Hon) Turn-On Delay Time - 4.5 - Voc) = 50V
t, Rise Time - 23 - ns ID = 5.7A
tdwm Turn-Off Delay Time - 32 - Rs = 22n
t, Fall Time - 23 - RD = 8.69, See Fig. 10 C9Cs)
Ls Intemal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Css Input Capacitance - 330 - Vss = 0V
Coss Output Capacitance - 92 - pF Vos = 25V
Cr55 Reverse Transfer Capacitance - 54 - f = 1.0MHz. See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSF ET symbol D
(Body Diode) - - 9.7 showing the _
ISM Pulsed Source Current - - 38 A integral reverse 0
(Body Diode) COG) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25''C, ls = 5.7A, l/ss = 0V CO
trr Reverse Recovery Time - 99 150 ns Tu = 25°C, I; = 5.7A
er Reverse RecoveryCharge - 390 580 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
C) Repetitive rating: pulse width limited by ([i) Pulse width C 300ps; duty cycle C 2%.
max. junction temperature. ( See 5g. 11 )
C) VDD = 25V, starting Tu-- 25''C, L = 4.7mH G) Uses IRF520N data and test conditions
Rs = 259. 1A3: 5.7A. (See Figure 12)
G) Iso I 5.7A, di/dt I 240A/ps, VDDS Visyvyss,
Tur: 175°C
" When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
2
