IRF440 ,N-Channel Power MOSFETs/ 8A/ 450 V/500Vapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF440 ,N-Channel Power MOSFETs/ 8A/ 450 V/500V
IRF450 ,13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFETapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF453 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A.
IRF460 ,500V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF4905 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1280CIRF4905®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = - ..
IS61WV25616BLS-25TLI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV3216BLL-12TLI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12TLI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV51216BLL-10TLI , 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV5128BLL-10KLI , 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS623 , OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC
IRF440
N-Channel Power MOSFETs/ 8A/ 450 V/500V
PD - 90372A
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED IRF44O
HEXFET®TRANSISTORS 500V, N-CHANNEL
THRU-HOLE (T0-204AA/AE)
ProductSummary
Part Number BVDSS RDS(on) ID
IRF440 500V 0.859 8.0A
The HEXFET®technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The erlcient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. Toa
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching '3 Dynamtc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio " t.lerm.etifa.lly Sealeq
amplifiers and high energy pulse circuits. " Simple Drive Ityuirements
u Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @VGS =0V, TC = 25°C Continuous Drain Current 8.0
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 5.0 A
I D M PuIsed Drain Current C) 32
PD @ Tc = 25°C Max. Power Dissipation 125 IN
Linear Derating Factor 1.0 W/°C
ve Gate-to-SourceVoltage :20 V
EAS Single Pulse Avalanche Energy Q) 700 mJ
IAR Avalanche Current C) 8.0 A
EAR Repetitive Avalanche Energy C) - mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range 00
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
For footnotes refer to the last page
1
4/20/01
IRF440 International
TOR Rectifier
Electrical Characteristics @T] = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source BreakdownVoltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDSS/ATJ Temperature Coefficient of Breakdown - 0.78 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.85 VGS = 10V, ID = 5.0AC0
Resistance - - 0.98 VGS = 10V, ID =8.0A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
git Forward Transconductance 4.7 - - S (5) VDS > 15V, IDS = 5.0A C4)
loss Zero Gate Voltage Drain Current - - 25 VDs=400V, VGs=0V
- - 250 VDs = 400V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 n A VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 VGS = -20V
09 Total Gate Charge 27.3 - 68.5 VGS =10V, ID=8.0A
ths Gate-to-Source Charge 2.0 - 12.5 nC VDS = 250V
di Gate-to-Drain ('Miller') Charge 11 - 42
td(on) Turn-On Delay Time - - 21 VDD =250V, ID =8.0A,
tr Rise Time - - 73 ns RG =9.1Q
td(off) Turn-Off Delay Time - - 72
tf Fall Time - - 51
LS + LD Total IndUCtance - 6.1 - nH Measured from drainlead(6mm/0.25in.from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1300 VGS = 0V, VDS = 25V
C055 OutputCapacitance - 310 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 120 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 8.0 A
ISM Pulse Source Current (Body Diode) C) - - 32
l/SD Diode Forward Voltage - - 1.5 V T] = 25°C, Is = 8.0A, VGS = 0V co
trr Reverse Recovery Time - - 700 rt T] = 25°C, IF = 8.0A, di/dt s 100Alys
QRR Reverse Recovery Charge - - 8.9 1.0 VDD 3 50V ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.0 °C/W
RthJA Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
