IRF3710SPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.22The D Pak is a surface mount power package capable of accommodating dieD Pak TO-262s ..
IRF3710SPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94201CIRF3710SIRF3710L®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-Resista ..
IRF3710STRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF3710STRLPBF , Advanced Process Technology
IRF3710STRLPBF , Advanced Process Technology
IRF3710STRR ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
IS61SF6432-10PQ , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF6432-10TQI , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SP12832-133TQ , 128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-133TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-133TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-133TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IRF3710S-IRF3710SPBF-IRF3710STRL-IRF3710STRR
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Description
Advanced HEXFET6 Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
PD - 94201 C
IRF3710S
RF371OL
H EXFET6 Power MOSFET
VDSS = 100V
RDS(on) = 23mQ
ID = 57A
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
D2Pak TO-262
sizes up to HEX-4. It provides the highest power capability and the lowest IRF3710S IRF3710L
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for Iow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ love 57
ID © To = 100°C Continuous Drain Current, Vas @ 10VOD 40 A
IDM Pulsed Drain Current 0M0 180
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Ves Gate-to-Source Voltage t 20 V
IAR Avalanche CurrentCD 28 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.8 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Fuuc Junction-to-Case - 0.75 ''C/W
ReJA Junction-to-Ambient (PCB Mounted,steady-state)“ - 4O
1
09/15/09
IRF3710S/lRF3710L
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - V/°C Reference to 25°C, ID = 1mA©
Roswn) Static Drain-to-Source On-Resistance - - 23 m9 Vas = 10V, ID =28A C4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250pA
gfs Forward Transconductance 32 - - S Vos = 25V, ID = 28A©©
loss Drain-to-Source Leakage Current - - 25 PA Vos = 100V, Vas = 0V
- - 250 VDS = 80V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
% Total Gate Charge - - 130 ID = 28A
Qgs Gate-to-Source Charge - - 26 nC I/os = 80V
di Gate-to-Drain ("Miller") Charge - - 43 I/ss = 10V, See Fig. 6 and 13©
tdwn) Turn-On Delay Time - 12 - VDD = 50V
t, Rise Time - 58 - ns ID = 28A
td(oit) Turn-Off Delay Time - 45 - Rs = 2.59
tt Fall Time - 47 - Vas = 10V, See Fig. 10 (90)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3130 - Vas = 0V
Coss Output Capacitance - 410 - VDS = 25V
Crss Reverse Transfer Capacitance - 72 - pF f = 1.0MHz, See Fig. 5©
EAS Single Pulse Avalanche Energy®® - 1060(S 280© mJ IAS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 57 MOSFET symbol D
(Body Diode) A showing the
IsM Pulsed Source Current - - 230 integral reverse G
(Body Diode)© p-n junction diode. 5
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 28A, Vas = 0V ©
trr Reverse Recovery Time - 140 220 ns TJ = 25°C, IF = 28A
a,, Reverse Recovery Charge - 670 1010 nC di/dt = 100A/ps (D
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting TJ = 25°C, L = 0.70mH, Re = 259,
las-- 28A, VGS=1OV. (See Figure 12).
© ISD S 28A, di/dt S 380A/ps, l/oo S V(BR)oss,
T J 5 175°C.
G) Pulse width S 400us; duty cycle S 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
C) Uses IRF3710 data and test conditions.
"When mounted on I" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
