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IRF3709Z-IRF3709ZS
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
0 Low RDS(on) at 4.5V VGS
o Low Gate Charge
q Fully Characterized Avalanche Voltage
PD - 95835
IRF3709Z
IRF3709ZS
IRF3709ZL
HEXFET® Power MOSFET
RDS(on) max Ctg
6.3mf2 17nC
and Current TO-220AB D2Pak TO-262
IRF3709Z IRF3709ZS IRF3709ZL
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 87© A
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 62©
IDM Pulsed Drain Current co 350
PD @Tc = 25''C Maximum Power Dissipation 79 W
PD @Tc = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/''C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case © - 1.89 "CIW
ROJA Junction-to-Ambient (PCB Mount) s - 40
Notes OD through co are on page 12
1
1/16/04
IRF3709Z/S/L International
TOR ilectifier
Static © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.0 6.3 mf2 VGS = 10V, ID = 21A ©
- 6.2 7.8 VGS = 4.5V, ID = 17A ©
VGS(lh) Gate Threshold Voltage 1.35 - 2.25 V Vros = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefrcient - -5.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vros = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gts Forward Transconductance 88 - - S Vros = 15V, ID = 17A
Qg Total Gate Charge - 17 26
0951 Pre-l/th Gate-to-Source Charge - 4.4 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.7 - nC Vss = 4.5V
cu, Gate-to-Drain Charge - 6.0 - ID = 17A
ngdr Gate Charge Overdrive - 4.9 - See Fig. 14a&b
Qsw Switch Charge (Qgs2 + di) - 7.7 -
Qoss Output Charge - 11 - nC Vos = 16V, I/ss = OV
td(on) Turn-On Delay Time - 13 - l/oo = 15V, VGS = 4.5V ©
t, Rise Time - 41 - ID = 17A
tum Turn-Off Delay Time - 16 - ns Clamped Inductive Load
tr Fall Time - 4.7 -
Ciss Input Capacitance - 2130 - Vss = 0V
Cass Output Capacitance - 450 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng va - 60
IAR va 1 7
EAR va 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 87© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 350 integral reverse G
(Body Diode) CD p-n junction diode. S
VsD Diode Forward Voltage - - 1.0 v T J = 25°C, ls = 17A, VGS = OV ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 17A, VDD = 15V
er Reverse Recovery Charge - 6.2 9.3 nC di/dt = 100A/ps ©
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