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IRF3709ZCLIRN/a280avai30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF3709ZCSIRN/a118avai30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF3709ZCL ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRF3709ZCSIRF3709ZCL
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IRF3709ZCL-IRF3709ZCS
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95836
IRF3709ZCS
IRF3709ZCL
International
TOR Rectifier
Applications HEXFET® Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Ctg
30V 6.3mf2 17nC
Benefits 'git,
0 Low RDS(on) at 4.5V VGS "ii-'j'it'it 'Rie' V
0 Low Gate Charge l, l,
q Fully Characterized Avalanche Voltage
and Current D2Pak TO-262
IRF3709ZCS IRF3709ZCL
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 87© A
lo @ TC = 100°C Continuous Drain Current, VGS © 10V 62©
IDM Pulsed Drain Current (O 350
Pro @TC = 25°C Maximum Power Dissipation 79 W
PD @Tc = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.89 °CNV
ROJA Junction-to-Ambient (PCB Mount) s - 40
Notes OD through co are on page 11
1
1116/04

IRF3709ZCS/L International
TOR ilectifier
Static © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.0 6.3 mf2 VGS = 10V, ID = 21A ©
- 6.2 7.8 VGS = 4.5V, ID = 17A ©
VGS(lh) Gate Threshold Voltage 1.35 - 2.25 V Vros = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefrcient - -5.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vros = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gts Forward Transconductance 88 - - S Vros = 15V, ID = 17A
Qg Total Gate Charge - 17 26
0951 Pre-l/th Gate-to-Source Charge - 4.4 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.7 - nC Vss = 4.5V
cu, Gate-to-Drain Charge - 6.0 - ID = 17A
ngdr Gate Charge Overdrive - 4.9 - See Fig. 14a&b
Qsw Switch Charge (Qgs2 + di) - 7.7 -
Qoss Output Charge - 11 - nC Vos = 16V, I/ss = OV
td(on) Turn-On Delay Time - 13 - l/oo = 15V, VGS = 4.5V ©
t, Rise Time - 41 - ID = 17A
tum Turn-Off Delay Time - 16 - ns Clamped Inductive Load
tr Fall Time - 4.7 -
Ciss Input Capacitance - 2130 - Vss = 0V
Cass Output Capacitance - 450 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng va - 60
IAR va 1 7
EAR va 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 87© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 350 integral reverse G
(Body Diode) CD p-n junction diode. S
VsD Diode Forward Voltage - - 1.0 v T J = 25°C, ls = 17A, VGS = OV ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 17A, VDD = 15V
er Reverse Recovery Charge - 6.2 9.3 nC di/dt = 100A/ps ©
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