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IRF3707Z-IRF3707ZL-IRF3707ZS
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
0 Low RDS(on) at 4.5V Vss
o Ultra-Low Gate Impedance
q Fully Characterized Avalanche Voltage
and Current
PD - 95812A
llRF3707Z
llRF3707ZS
IRF3707ZL
HEXFET0 Power MOSFET
RDS(on) max titg
9.5m!) 9.7nC
11(,isk)
TO-220AB D2Pak TO-262
|RF3707Z IRF3707ZS IRF3707ZL
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ To = 25°C Continuous Drain Current, Ves @ 10V s 59© A
ID © TC = 100°C Continuous Drain Current, Vas @ 10V s 42©
IDM Pulsed Drain Current (O 230
PD @Tc = 25°C Maximum Power Dissipation 57 W
PD @Tc = 100°C Maximum Power Dissipation 28
Linear Derating Factor 0.38 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 2.653 °C/W
R003 Case-to-Sink, Flat Greased Surface S 0.50 -
ROJA Junction-to-Ambient © - 62
Ros Junction-to-Ambient (PCB Mount) © - 40
Notes OD through co are on page 12
1
12/4/03
IRF3707Z/S/L International
TOR ilectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 m9 Vss = 10V, ID = 21A ©
- 10 12.5 Vss=4.5V, Io=17AC3)
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V Vos = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, l/ss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage -.-.- __- -100 Vss = -20V
gfs Forward Transconductance 81 - - S Vos = 15V, ID = 17A
q, Total Gate Charge - 9.7 15
0931 Pre-Vth Gate-to-Source Charge - 2.8 - l/rss = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC Vas = 4.5V
di Gate-to-Drain Charge - 3.4 - ID = 17A
ngdr Gate Charge Overdrive --.- 2.5 --.- See Fig. 16
st Switch Charge (Q952 + di) - 4.4 -
Qoss Output Charge - 6.2 - nC Vos = 16V, Vas = 0V
tam) Turn-On Delay Time - 9.8 - VDD = 15V, Vss = 4.5V ©
t, Rise Time - 41 - ID = 17A
td(off) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
tt Fall Time - 3.6 -
Ciss Input Capacitance - 1210 - Vss = 0V
Cass Output Capacitance - 260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS e ergy 40
IAR 23
EAR ergy 5.7
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 5905 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 230 integral reverse 9
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V Tu = 25°C, Is = 17A, l/tss = 0V ©
trr Reverse Recovery Time - 14 21 ns TJ = 25°C, IF = 17A, VDD = 15V
Q" Reverse Recovery Charge - 5.2 7.8 nC di/dt = 100A/ps ©
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