IRF3707STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max I Converters with Synch ..
IRF3707Z ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRF3707ZCL ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRF3707ZCSIRF3707ZCL
IRF3707ZCS ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRF3707ZCSTRRP ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRF3707ZL ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRF3707ZIRF3707ZSIRF3707ZL
IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NW6432-5TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-7TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61QDB21M36-250M3 , 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IRF3707STRLPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD -95528
Internohqrjol lRF3707PbF
TOR Rectifier SMPS MOSFET IRF3707SPbF
IRF3707LPbF
Applications HEXFET© Power MOSFET
0 High Frequency DC-DC Isolated
Converters with Synchronous Rectification VDSS RDS(on) max ID
for Telecom and Industrial use 30V 12.5mQ 62A
. High Frequency Buck Converters for
Computer Processor Power
0 Lead-Free
r. It''';,
Benefits iijjiiic) ':i;iiiiiiit 1iiitr
_ T V - _ "s ",
o Ultra-Low Gate Impedance 'isiir,s 3’1 \
0 Very Low Rosmn)
0 Fully Characterized Avalanche Voltage T0-220AB D2Pak TO-262
and Current IRF3707 lRF3707S IRF3707L
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20 V
In @ To = 25°C Continuous Drain Current, l/ss © 10V 62
ID @ To = 70°C Continuous Drain Current, I/ss @ 10V 52 A
IDM Pulsed Drain Current© 248
PD @Tc = 25°C Maximum Power Dissipation@ 87 W
PD @Tc = 70°C Maximum Power Dissipation© 61 W
Linear Derating Factor 0.59 mW/°C
To , Tsms Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Fhuc Junction-to-Case - 1 .73
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient) - 62
RQJA Junction-to-Ambient (PCB mount)* - 40
* When mounted on I" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes OD through 60 are on page 10
1
7/20/04
IRF3707S/LPbF International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 -- -- V Vss = 0V, ID = 250uA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.027 - V/°C Reference to 25°C, ID = 1mA
. . . - 9.0 12.5 Veg =10V, ID = 15A ©
Roswn) Static Drain-to-Source On-Resistance - 12.6 17 m9 l/ss = 4.5V, Ir) = 12A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current : : 12:0 pA x3: : :21 x2: : 3x Tu = 12500
less Gate-to-Source Forward Leakage - -- 200 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -2OO Vas = -16V
Dynamic (ti) To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 37 - - S Vos = 15V, ID = 49.6A
09 Total Gate Charge - 19 - ID = 24.8A
Qgs Gate-to-Source Charge - 8.2 - nC VDS = 15V
qu Gate-to-Drain ("Miller") Charge - 6.3 - Vss = 4.5V ©
Qoss Output Gate Charge - 18 27 Vas = 0V, VDs = 15V
td(on) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 78 - ns ID = 24.8A
td(0ff) Turn-Off Delay Time - 11.8 - Rs = 1.89
if Fall Time - 3.3 - VGS = 4.5V ©
Ciss Input Capacitance - 1990 - Vss = ov
Coss Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 50 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 213 mJ
IAR Avalanche CurrentCD - 62 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ - 62 A showing the
ISM Pulsed Source Current _ - 248 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V To = 25°C, Is = 31A, Vss = 0V ©
- 0.8 - TI, =125°C, Is = 31A, l/ss = 0V ©
trr Reverse Recovery Time - 39 59 ns TI, = 25°C, IF = 31A, VR=20V
Q,, Reverse Recovery Charge - 49 74 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 42 63 ns To = 125°C, IF = 31A, VR=20V
G, Reverse Recovery Charge - 62 93 nC di/dt = 100A/ps G)
2
