IRF3704ZS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRF3704ZIRF3704ZSIRF3704ZL
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IRF3704Z-IRF3704ZS
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 94756
IRF3704Z
IRF3704ZS
IRF3704ZL
Applications HEXFET® Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Qg
20V 7.9mQ 8.7nC
Benefits [ 'r'liiiiih
0 Low RDS(on) at 4.5V VGS "i5il'; ‘x G"
o Ultra-Low Gate Impedance "s, ' _
q Fully Characterized Avalanche Voltage .
and Current TO-220AB D2Pak TO-262
IRF3704Z IRF3704ZS IRF3704ZL
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage , 20
ID @ TC = 25°C Continuous Drain Current, I/ss @ 10V 67 © A
lo @ TC = 100°C Continuous Drain Current, VGS @ 10V 47 ©
los, Pulsed Dram Current T 260
PD @Tc = 25°C Maximum Power Dissipation 57 W
PD @Tc = 100°C Maximum Power Dissipation 28
Linear Derating Factor 0.38 W/°C
To Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw Ci) 10 Ibf-in (1 .1N°m)
Thermal Res stance
Parameter Typ. Max. Units
Roc Junction-to-Case © - 2.65 "C/W
Recs Case-to-Sink, Flat Greased Surface © 0.50 -
ROJA Junction-to-Ambient ©© - 62
ROJA Junction-to-Ambient (PCB Mount) SO) - 40
Notes OD through co are on page 12
1
3/1/04
IRF3704Z/S/L
Static @ T J = 25°C (unless otherwise specified)
International
TOR ilectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient - 0.014 V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.5 7.9 m9 Vss = 10V, ID = 21A ©
- 9.1 11.1 Vss=4.5V,lro=17A©
VGS(lh) Gate Threshold Voltage 1.65 2.1 2.55 V Vros = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, VGS = 0V
- - 150 Vos = 16V, I/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 48 - - S Vos = 10V, ID = 17A
q, Total Gate Charge .- 8.7 13
Qgs1 Pre-l/th Gate-to-Source Charge - 2.9 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 1.1 - nC VGS = 4.5V
di Gate-to-Drain Charge - 2.3 - ID = 17A
ngdr Gate Charge Overdrive - 2.4 - See Fig. 16
st Switch Charge (Qgs2 + Ad) - 3.4 -
Qoss Output Charge - 5.6 - nC Vros = 10V, VGS = 0V
tam) Turn-On Delay Time - 8.9 - VDD = 10V, VGS = 4.5V ©
t, Rise Time - 38 - ID = 17A
tam Turn-Off Delay Time - 11 - ns Clamped Inductive Load
tf Fall Time - 4.2 _
Ciss Input Capacitance - 1220 - VGS = 0V
C055 Output Capacitance - 390 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz
Avalanche Characteristics
Parameter
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 67 © MOSFET symbol D
(Body Diode) A showing the
G, Pulsed Source Current - - 260 integral reverse G
(Body Diode) T p-n junction diode. S
VsD Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 17A, VGS = 0V ©
trr Reverse Recovery Time - 11 17 ns TJ = 25°C, IF = 17A, VDD = 10V
Cr, Reverse Recovery Charge - 2.3 3.5 nC di/dt = 100A/ps ©
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